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參數(shù)資料
| 型號(hào)： | MUN5214 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | TV 13C 13#22D SKT RECP |
| 中文描述： | 雙偏置電阻晶體管 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 230K |
| 代理商： | MUN5214 |
PIN3
COLLECTOR
(OUTPUT)
PIN2
EMITTER
(GROUND)
PIN1
BASE
(INPUT)
R1
R2
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device
and its external resistor bias network. The BRT (Bias Resistor Transistor)
contains a single transistor with a monolithic bias network consisting of two
resistors; a series base resistor and a base-emitter resistor. The BRT eliminates
these individual components by integrating them into a single device. The use
of a BRT can reduce both system cost and board space. The device is housed
in the SC-70/SOT-323 package which is designed for low power surface mount
applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC-70/SOT-323 package can be soldered using
wave or reflow. The modified gull-winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
VCEO
IC
PD
50
Vdc
Collector-Emitter Voltage
50
Vdc
Collector Current
Total Power Dissipation @ TA = 25
°
C(1)
Derate above 25
°
C
THERMAL CHARACTERISTICS
100
mAdc
*
150
1.2
mW
mW/
°
C
Thermal Resistance — Junction-to-Ambient (surface mounted)
R
θ
JA
TJ, Tstg
TL
833
°
C/W
°
C
°
C
Sec
Operating and Storage Temperature Range
–65 to +150
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
DEVICE MARKING AND RESISTOR VALUES
260
10
Device
Marking
R1 (K)
R2 (K)
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1(2)
MUN5216T1(2)
MUN5230T1(2)
MUN5231T1(2)
MUN5232T1(2)
MUN5233T1(2)
MUN5234T1(2)
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MUN5211T1/D
SEMICONDUCTOR TECHNICAL DATA
NPN SILICON
BIAS RESISTOR
TRANSISTORS
Motorola Preferred Devices
CASE 419-02, STYLE 3
SC-70/SOT-323
1
2
3
REV 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MUN5215 | Dual Bias Resistor Transistors |
| MUN5230 | Dual Bias Resistor Transistors |
| MUN5230DW1T1 | Dual Bias Resistor Transistors |
| MUN5231DW1T1 | Dual Bias Resistor Transistors |
| MUN5232DW1T1 | Dual Bias Resistor Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUN5214DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Surface Mount Dual Bias Resistor Transistor |
| MUN5214DW1T1 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT Dual RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5214DW1T1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 SS BR XSTR NPN 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5214T1 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5214T1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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