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參數資料
| 型號： | MUR160-B |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1.0A SUPER-FAST RECTIFIER |
| 中文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 89K |
| 代理商： | MUR160-B |
DS30112 Rev. 6 - 2
1 of 3
MUR140 - MUR160
www.diodes.com
Diodes Incorporated
MUR140 - MUR160
1.0A SUPER-FAST RECTIFIER
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@ T
A
= 25 C unless otherwise specified
DO-41 Plastic
Min
Dim
A
B
C
D
All Dimensions in mm
Max
25.40
4.06
5.21
0.71
0.864
2.00
2.72
Notes: 1. Measured at 1.0MHz and applied reverse voltage of 0V DC.
2. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See Figure 5.
3. Measured with I
F
= 1A, di/dt = 50A/us.
4. Measured with I
F
= 1.0A, di/dt = 100A/ s, Duty Cycle
5. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
2.0%
Case: DO-41
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Bright Tin. Solderable per
MIL-STD-202, Method 208
Marking: MUR140: R140
MUR160: R160
Polarity: Cathode Band
Mounting Position: Any
Weight: 0.35 grams (approximate)
Characteristic
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
MUR140
MUR160
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage @ I
F
= 1.0A, T
J
= 25°C
400
600
V
283
424
V
A
@ T
T
= 120 C
1.0
I
FSM
35
A
@ I
F
= 1.0A, T
J
= 150°C
@ T
A
= 25 C
@ T
A
= 150 C
V
FM
1.25
1.05
5.0
150
50
75
50
45
72
V
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Reverse Recovery Time (Note 3)
Forward Recovery Time (Note 4)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
I
RM
A
t
rr
t
rr
t
fr
C
j
ns
ns
ns
pF
K/W
C
R
JA
T
j
, T
STG
-65 to +175
A
A
B
C
D
Features
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current Capability
Surge Overload Rating to 35A Peak
Ideally Suited for Automated Assembly
Lead Free Finish, RoHS Compliant (Note 5)
Mechanical Data
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MUR160-E3/1 | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR160-E3/4 | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR160-E3/51 | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR160-E3/54 | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR160-E3/73 | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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