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參數資料
| 型號： | MUR880E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHMODE Power Rectifiers |
| 中文描述： | 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | LEAD FREE, PLASTIC, CASE 221B-04, 2 PIN |
| 文件頁數： | 4/6頁 |
| 文件大小： | 94K |
| 代理商： | MUR880E |
MUR8100E, MUR880E
http://onsemi.com
4
t
0
t
1
t
2
t
V
DD
I
D
I
L
BV
DUT
MERCURY
SWITCH
Figure 6. Test Circuit
Figure 7. CurrentVoltage Waveforms
+V
DD
DUT
40 H COIL
V
D
I
L
S
1
I
D
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S
1
is closed at t
0
the current in the inductor I
L
ramps
up linearly; and energy is stored in the coil. At t
1
the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV
DUT
and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t
2
.
By solving the loop equation at the point in time when S
1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
DD
power supply while the diode is in
breakdown (from t
1
to t
2
) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
DD
voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S
1
was closed,
Equation (2).
The oscilloscope picture in Figure 8, shows the
MUR8100E in this test circuit conducting a peak current of
one ampere at a breakdown voltage of 1300 V, and using
Equation (2) the energy absorbed by the MUR8100E is
approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
WAVAL
1
2LI2
LPK
BVDUT
BVDUT–VDD
WAVAL
1
2LI2
LPK
Figure 8. CurrentVoltage Waveforms
CHANNEL 2:
I
L
0.5 AMPS/DIV.
CHANNEL 1:
V
DUT
500 VOLTS/DIV.
TIME BASE:
20 s/DIV.
EQUATION (1):
EQUATION (2):
CH1
CH2
REF
REF
CH1
CH2
ACQUISITIONS
SAVEREF SOURCE
1
217:33 HRS
STACK
A
20 s
953 V
VERT
500V
50mV
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MUR880EG | 功能描述:整流器 800V 8A UltraFast RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR890 | 制造商:Harris Corporation 功能描述: |
| MUR9043TN | 制造商:PCTEL 功能描述:ANTENNA UNIT |
| MURA105 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SURFACE MOUNT ULTRAFAST RECTIFIERS |
| MURA105T3 | 功能描述:整流器 50V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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