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參數(shù)資料
| 型號(hào)： | MURC1520 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | MURC1510-MURC1560 Ultrafast Silicon Die |
| 中文描述： | 15 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-2 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 356K |
| 代理商： | MURC1520 |
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4861, Rev.-
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
MURC1510-MURC1560
MURC1510-MURC1560
Ultrafast Silicon Die
Applications:
Switching Power Supply
General Purpose
Free-Wheeling Diodes
Polarity Protection
Diode
Features:
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Symbol
MURC
1510
Peak Inverse Voltage
V
RWM
Average Rectified Forward
Current(Rated V
R
)
Peak Rectified Forward
Current(Rated V
R
, Square Wave, 20
kHz)
Max. Peak One Cycle Non-Repetitive
Surge Current
8.3 ms, half Sine pulse
MURC
1515
150
15 @ T
C
= 150
°
C
MURC
1520
200
MURC
1540
400
MURC
1560
600
15 @ T
C
=
145
°
C
30 @ T
C
=
145
°
C
Unit
100
V
A
I
F(AV)
I
FRM
30 @ T
C
= 150
°
C
A
I
FSM
200
150
A
Operating JunctionTemperature and
Storage Temperature
Electrical Characteristics:
Characteristics
T
J,
T
stg
-65 to +175
°
C
Symbol
MURC
1510
MURC
1515
0.85
1.05
500
10
MURC
1520
MURC
1540
1.12
1.25
500
10
MURC
1560
1.20
1.50
1000
10
Unit
Max. Instantaneous Forward Voltage
(Note1)
(I
F
= 15 Amp, T
J
= 150
°
C)
(I
F
= 15 Amp, T
J
= 25
°
C)
Max. Instantaneous Reverse Current
(Note1)
(Rated DC Voltage, T
C
= 150
°
C)
(Rated DC Voltage, T
C
= 25
°
C)
Max. Junction Capacitance
@V
R
= 5V, T
C
= 25
°
C
f
SIG
= 1MHz, V
SIG
= 50mV (p-p)
Max Reverse Recovery Time
(I
F
= 1.0 Amp, di/dt = 50 A/
μ
s)
(I
F
= 0.5 Amp, I
R
= 1.0 A, I
REC
=0.25A)
1. Pulse Test: Pulse Width = 300μs, Duty Cycle
≤
2%
V
F
V
I
R
μ
A
C
T
240
pF
t
rr
35
25
60
50
nS
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