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參數(shù)資料
| 型號(hào)： | MURC620 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | MURC620 Ultrafast Silicon Die |
| 中文描述： | 6 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-2 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 244K |
| 代理商： | MURC620 |
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4857, Rev.-
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
MURC620
MURC620
Ultrafast Silicon Die
Applications:
Switching Power Supply
General Purpose
Free-Wheeling Diodes
Polarity Protection
Diode
Features:
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Symbol
Peak Inverse Voltage
V
RWM
Max. Average Forward
I
F(AV)
50% duty cycle @T
C
=100°C,
rectangular wave form
Max. Peak One Cycle Non-
Repetitive Surge Current
Condition
-
Max.
200
6.0
Units
V
A
I
FSM
8.3 ms, half Sine pulse
60
A
Max. Junction Capacitance
C
J
@V
R
= 5V, T
C
= 25
°
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
75
pF
Max. Junction Temperature
Max. Storage Temperature
T
J
T
stg
-
-
-65 to +150
-65 to +150
°
C
°
C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop *
Symbol
V
F1
Condition
Max.
1.2
Units
V
@ 6.0A, Pulse, T
J
= 25
°
C
@ 6.0A, Pulse, T
J
= 100
°
C
@V
R
= rated V
R
T
J
= 25
°
C
@V
R
= 0.8V
R
T
J
= 100
°
C
V
F2
1.0
6
V
Max. Reverse Current *
I
R1
μ
A
I
R2
60
μ
A
nS
nS
Max Reverse Recovery Time
Max Reverse Recovery Time
t
rr
t
rr
I
F
=0.5A, I
R
=1.0A, I
REC
=0.25A
I
F
=6A, di/dt=200A/
μ
s
25
35
* Pulse Width < 300μs, Duty Cycle <2%
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