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參數資料
| 型號： | MURC860 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | MURC805-MURC860 Ultrafast Silicon Die |
| 中文描述： | 8 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-2 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 331K |
| 代理商： | MURC860 |
SENSITRON
SEMICONDUCTOR
Data Sheet 4858, Rev.-
Technical Data
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
MURC805-MURC860
MURC805-MURC860
Ultrafast Silicon Die
Applications:
Switching Power Supply
General Purpose
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Symbol
MURC
805
Peak Inverse Voltage
V
RWM
50
Average Rectified Forward
Current Total Device,(Rated V
R
),
T
C
= 150
°
C
Peak Repetitive Forward Current
(Rated V
R,
Squre Wave,20KHz),
T
C
= 150
°
C
Max. Peak One Cycle Non-
Repetitive Surge Current
8.3 ms, half Sine pulse
Operating JunctionTemperature
and Storage Temperature
Electrical Characteristics:
Characteristics
Symbol
MURC
805
Max. Forward Voltage Drop(Note1)
(I
F
= 8.0 Amp, T
J
= 150
°
C)
(I
F
= 8.0 Amp, T
J
= 25
°
C)
Max. Reverse Current (Note1)
(Rated DC Voltage, T
J
= 150
°
C)
(Rated DC Voltage, T
J
= 25
°
C)
Max. Junction Capacitance
@V
R
= 5V, T
C
= 25
°
C
f
SIG
= 1MHz, V
SIG
= 50mV (p-p)
Max Reverse Recovery Time
(I
F
= 1.0 Amp, di/dt = 50 A/
μ
s)
(I
F
= 0.5 Amp, I
R
= 1.0 A,
I
REC
=0.25A)
1. Pulse Test: Pulse Width = 300μs, Duty Cycle
≤
2%
MURC
810
100
MURC
815
150
MURC
820
200
8.0
MURC
840
400
MURC
860
600
Unit
V
A
I
F(AV)
I
FM
16
A
I
FSM
100
A
T
J,
T
stg
-65 to +175
°
C
MURC
810
MURC
815
MURC
820
MURC
840
1.00
1.30
MURC
860
Unit
V
F
0.895
0.975
1.20
1.50
V
I
R
250
5.0
500
10
μ
A
pF
C
T
240
t
rr
35
25
60
50
nS
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