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參數資料
| 型號： | MURHB860CT |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | MEGAHERTZ Power Rectifier(MEGAHERTZ功率整流管) |
| 中文描述： | 4 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, CASE 418B-04, D2PAK-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 48K |
| 代理商： | MURHB860CT |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 2
1
Publication Order Number:
MURHB860CT/D
MURHB860CT
Preferred Device
MEGAHERTZ
Power Rectifier
D
2
PAK Power Surface Mount Package
These stateoftheart devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
Package Designed for Power Surface Mount Applications
Ultrafast 35 Nanosecond Recovery Times
175
°
C Operating Junction Temperature
Epoxy Meets UL 94 V0 @ 0.125 in
High Temperature Glass Passivated Junction
High Voltage Capability to 600 V
Low Leakage Specified @ 150
°
C Case Temperature
Short Heat Sink Tab Manufactured Not Sheared!
Similar in Size to Industry Standard TO220 Package
PbFree Packages are Available
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
MAXIMUM RATINGS
(Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
R
600
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 120
°
C) Total Device
I
F(AV)
4.0
8.0
A
Peak Repetitive Forward Current (Rated
V
R
, Square Wave, 20 kHz, T
C
= 120
°
C)
I
FM
8.0
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
100
A
Operating Junction and Storage
Temperature Range
T
J
, T
stg
65 to +175
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Device
Package
Shipping
ORDERING INFORMATION
MURHB860CT
D
2
PAK
D
2
PAK
CASE 418B
STYLE 3
50 Units/Rail
3
4
1
ULTRAFAST RECTIFIER
8.0 AMPERES, 600 VOLTS
1
3
4
Preferred
devices are recommended choices for future use
and best overall value.
MURHB860CTT4
D
2
PAK
800/Tape & Reel
MARKING DIAGRAM
MURHB860CTT4G
D
2
PAK
(PbFree)
800/Tape & Reel
MURHB860CTG
D
2
PAK
(PbFree)
50 Units/Rail
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
A
Y
WW
UH860 = Device Code
G
= PbFree Package
AKA
= Diode Polarity
= Assembly Location
= Year
= Work Week
AY WW
UH860G
AKA
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MURHB860CT/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEGAHERTZ? Power Rectifier |
| MURHB860CTG | 功能描述:整流器 600V 8A Ultrafast RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURHB860CTT4 | 功能描述:整流器 600V 8A Ultrafast RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURHB860CTT4G | 功能描述:整流器 600V 8A Ultrafast RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURHD560T4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:MEGAHERTZ TM Power Rectifier |
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