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參數資料
| 型號： | MURS120 |
| 廠商： | GENERAL SEMICONDUCTOR INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 44K |
| 代理商： | MURS120 |
MURS120
Ultrafast Plastic Rectifier
Reverse Voltage
200V
Forward Current
1.0A
Reverse Recovery Time
25ns
NewProduct
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Device Marking Codes
MD
Maximum repetitive peak reverse voltage
V
RRM
200
V
Working peak reverse voltage
V
RWM
200
V
Maximum DC blocking voltage
V
DC
200
V
Maximum average forward rectified current at T
L
= 155°C
(See figure 1)
I
F(AV)
1.0
2.0
A
T
L
= 145°C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
I
FSM
40
A
Typical thermal resistance junction to ambient
R
θ
JL
13
°C/W
Operating junction and storage temperature range
T
J
, T
STG
–65 to +175°C
°C
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous
at I
F
= 1.0A, T
J
= 25°C
forward voltage
(1)
at I
F
= 1.0A, T
J
= 150°C
0.875
0.71
V
F
V
Maximum instantaneous reverse current
at rated DC blocking voltage
(1)
T
J
= 25°C
T
J
= 150°C
I
R
2.0
50
μ
A
Maximum reverse recovery time at I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
t
rr
25
ns
Maximum reverse recovery time
at
I
F
= 1.0A, di/dt = 50A/
μ
s, V
R
= 30V, I
rr
= 10% I
RM
Maximum forward recovery time at I
F
= 1.0A, di/dt = 100A/
μ
s,
recovery to 1.0V
t
rr
35
ns
t
fr
25
ns
Note:
(1) Pulse test: t
p
= 300
μ
s, duty cycle
≤
2%
3/20/01
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Features
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideally suited for use in very high frequency switching
power supplies, inverters and as free wheeling diodes
Ultrafast recovery time for high efficiency
For surface mount applications Glass passivated junction
High temperature soldering guaranteed:
250°C/10 seconds
on terminals
Mechanical Data
Case:
JEDEC DO-214AA molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.003oz., 0.093g
Packaging Codes/Options:
5/3.2K per 13” reel (12mm tape)
2/750 EA per 7” reel (12mm tape)
Dimensions in inches
and (millimeters)
DO-214AA (SMB)
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MURS120/2 | 功能描述:DIODE FAST 1A 200V SMB RoHS:否 類別:分離式半導體產品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復 = 200mA（Io） 反向恢復時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應商設備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MURS120/2T | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120/52T | 功能描述:整流器 1.0 Amp 200V 25ns RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120/55T | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120/5BT | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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