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參數資料
| 型號： | MURS360 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | ULTRAFAST RECTIFIERS 3.0 AMPERES 200-600 VOLTS |
| 中文描述： | 4 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | CASE 403-03, SMC, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 107K |
| 代理商： | MURS360 |
1
Rectifier Device Data
. . . employing state–of–the–art epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for high voltage, high frequency
rectification, or as free wheeling and protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Small Compact Surface Mountable Package with J–Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150
°
C)
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 217 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 260
°
C
Max. for 10 Seconds
Shipped in 16 mm Tape and Reel, 2500 units per reel
Polarity: Notch in Plastic Body Indicates Cathode Lead
Marking: U3D, U3J
MAXIMUM RATINGS
R i
Rating
Symbol
b l
MURS
U i
Unit
320T3
360T3
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
600
Volts
Average Rectified Forward Current
IF(AV)
3.0 @ TL = 140
°
C
4.0 @ TL = 130
°
C
3.0 @ TL = 130
°
C
4.0 @ TL = 115
°
C
Amps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM
75
Amps
Operating Junction Temperature
TJ
65 to +175
°
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Lead
R
θ
JL
11
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 3.0 A, TJ = 25
°
C)
(iF = 4.0 A, TJ = 25
°
C)
(iF = 3.0 A, TJ = 150
°
C)
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25
°
C)
(Rated dc Voltage, TJ = 150
°
C)
vF
0.875
0.89
0.71
1.25
1.28
1.05
Volts
iR
5.0
15
10
250
μ
A
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/
μ
s)
(iF = 0.5 A, iR = 1.0 A, IREC to 0.25 A)
trr
35
25
75
50
ns
Maximum Forward Recovery Time
(iF = 1.0 A, di/dt = 100 A/
μ
s, Recovery to 1.0 V)
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
tfr
25
50
ns
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MURS320T3/D
SEMICONDUCTOR TECHNICAL DATA
ULTRAFAST RECTIFIERS
3.0 AMPERES
200–600 VOLTS
CASE 403–03
Motorola Preferred Devices
Rev 2
相關PDF資料 |
PDF描述 |
|---|---|
| MURS320 | 3.0A SURFACE MOUNT SUPER-FAST RECTIFIER |
| MURS360 | Ultrafast Rectifiers |
| MURS320T3G | Surface Mount Ultrafast Power Rectifiers |
| MURS360T3G | Surface Mount Ultrafast Power Rectifiers |
| MURS320T3 | ULTRAFAST RECTIFIERS 3.0 AMPERES 200-600 VOLTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MURS360/57T | 功能描述:整流器 600 Volt 3.0A 50ns 125 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS360/59T | 功能描述:整流器 600 Volt 3.0A 50ns 125 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS360/7T | 功能描述:整流器 600 Volt 3.0A 50ns 125 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS360/9AT | 功能描述:整流器 600 Volt 3.0A 50ns 125 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS360/9BT | 功能描述:整流器 600 Volt 3.0A 50ns 125 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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