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參數資料
| 型號： | MV1N6364E3TR |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| 封裝： | HERMETIC SEALED, METAL, DO-13, 2 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 165K |
| 代理商： | MV1N6364E3TR |
1500 W LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6356 thru 1N6372, e3
or MPT-5 thru MPT-45C, e3
1N6
356
thru
1N6
372,
e3
MPT-5
th
ru
MPT-45
C,
e3
DESCRIPTION
APPEARANCE
This Transient Voltage Suppressor (TVS) series for 1N6356 thru 1N6372 are
JEDEC registered selections for both unidirectional and bidirectional devices.
The 1N6356 thru 1N6364 are unidirectional and the 1N6365 thru 1N6372 are
bi-directional where they all provide a very low specified clamping factor for
minimal clamping voltages (VC) above their respective breakdown voltages
(VBR) as specified herein. They are most often used in protecting sensitive
components from inductive switching transients or induced secondary
lightning effects as found in lower surge levels of IEC61000-4-5 . They are
also very successful in protecting airborne avionics and electrical systems.
Since their response time is virtually instantaneous, they can also protect
from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
DO-13
(DO-202AA)
IMPORTANT:
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Unidirectional and bidirectional TVS series for thru-hole
mounting
Suppresses transients up to 1500 watts @ 10/1000 s
tclamping (0 volts to V(BR) min):
Unidirectional – Less than 100 pico seconds.
Bidirectional – Less than 5 nano seconds.
Working voltage (VWM) range 5 V to 45 V
Low clamping factor (ratio of actual VC/VBR): 1.33 @
full rated power and 1.20 @ 50% rated power
Hermetic sealed DO-13 metal package
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, JANTXV, and JANS are also available
by adding MQ, MX, MV, SP prefixes respectively to part
numbers, e.g. MX1N6356, etc.
RoHS Compliant devices available by adding “e3” suffix
Surface mount equivalent packages also available as
SMCJ6356 – SMCJ6372 (consult factory for other
surface mount options)
Plastic axial-leaded equivalents available in the
1N6373 – 1N6389 series (see separate data sheet)
Designed to protect Bipolar and MOS Microprocessor
based systems.
Protection from switching transients and induced RF
ESD and EFT protection per IEC 61000-4-2 and -4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1, 2 & 3 1N6356 to 1N6372
Class 4: 1N6356 to 1N6362
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 & 2: 1N6356 to 1N6372
Class 3: 1N6356 to 1N6362
Class 4: 1N6356 to 1N6358
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: 1N6356 to 1N6361
Class 3: 1N6356 to 1N6358
Inherently radiation hard per Microsemi MicroNote
050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
1500 Watts for 10/1000 μs with repetition rate of 0.01% or
less*
at lead temperature (TL) 25
oC (See Figs. 1, 2, & 4)
Operating & Storage Temperatures: -65
o to +175oC
THERMAL RESISTANCE: 50
oC/W junction to lead at
0.375 inches (10 mm) from body or 110
oC/W junction to
ambient when mounted on FR4 PC board with 4 mm
2
copper pads (1 oz) and track width 1 mm, length 25 mm
DC Power Dissipation
*: 1 Watt at TL < +125oC 3/8” or 10
mm from body (also see Figure 5)
Forward surge current: 200 Amps for 8.3ms half-sine
wave at TA = +25
oC for unidirectional only (1N6356-6364)
Solder Temperatures: 260
o C for 10 s (maximum)
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external metal surfaces are Tin-Lead or
RoHS Compliant annealed matte-Tin plating
solderable per MIL-STD-750 method 2026
POLARITY: Cathode connected to case and
polarity indicated by diode symbol
MARKING: Part number and polarity diode symbol
WEIGHT: 1.4 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
Microsemi
Scottsdale Division
Page 1
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).
Copyright
2007
10-03-2007 REV C
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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