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參數資料
| 型號： | MV1N6381E3TR |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE 1, 2 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 174K |
| 代理商： | MV1N6381E3TR |
1500 WATT LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2008
10-09-2008 REVD
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6373 thru 1N6389, e3
or MPTE-5 thru MPTE-45C, e3
1N6
373
thru
1N6
389,
e3
MPTE-5
thr
u
MPTE-45
C
,e3
DESCRIPTION
APPEARANCE
This Transient Voltage Suppressor (TVS) series for 1N6373 thru 1N6389
are JEDEC registered selections for both unidirectional and bidirectional
devices. The 1N6373 thru 1N6381 are unidirectional and the 1N6382 thru
1N6389 are bi-directional where they all provide a very low specified
clamping factor for minimal clamping voltages (VC) above their respective
breakdown voltages (VBR) as specified herein. They are most often used
in protecting sensitive components from inductive switching transients or
induced secondary lightning effects as found in lower surge levels of
IEC61000-4-5 .
They are also very successful in protecting airborne
avionics and electrical systems.
Since their response time is virtually
instantaneous, they can also protect from ESD and EFT per IEC61000-4-2
and IEC61000-4-4.
IMPORTANT:
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Unidirectional and bidirectional TVS series for thru-hole
mounting
Suppresses transients up to 1500 watts @ 10/1000 s
tclamping (0 volts to V(BR) min):
Unidirectional – Less than 100 pico seconds.
Bidirectional – Less than 5 nano seconds.
Working voltage (VWM) range 5 V to 45 V
Low clamping factor (ratio of actual VC/VBR): 1.33 @ full
rated power and 1.20 @ 50% rated power
Economical plastic encapsulated TVS for thru-hole mount
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, and JANTXV are also available by
adding MQ, MX, or MV prefixes respectively to part
numbers, e.g. MX1N6373, etc.
Surface mount equivalent packages also available as
SMCJ6373 – SMCJ6389 (consult factory for other
surface mount options)
RoHS Compliant devices available by adding “e3” suffix
Metal package axial-leaded equivalents available in the
1N6373 – 1N6389 series (see separate data sheet)
Designed to protect Bipolar and MOS
Microprocessor based systems.
Protection from switching transients and induced RF
ESD & EFT protection per IEC 61000-4-2 and -4-4
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1, 2 & 3 1N6356 to 1N6372
Class 4: 1N6356 to 1N6362
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance:
Class 1 & 2: 1N6356 to 1N6372
Class 3: 1N6356 to 1N6362
Class 4: 1N6356 to 1N6358
Secondary lightning protection per IEC61000-4-5
with 2 Ohms source impedance:
Class 2: 1N6356 to 1N6361
Class 3: 1N6356 to 1N6358
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
1500 Watts for 10/1000 μs with repetition rate of 0.01% or
less* at lead temperature (TL) 25
oC (See Figs. 1, 2, & 4)
Operating & Storage Temperatures: -65o to +150oC
Thermal Resistance: 22C/W junction to lead at 3/8 inch
(10 mm) from body, or 82
C/W junction to ambient when
mounted on FR4 PC board with 4 mm
2 copper pads (1oz)
and track width 1 mm, length 25 mm
Steady-State Power dissipation*: 5 watts at TL < 40oC, or
1.52 watts at TA = 25
C when mounted on FR4 PC board
described for thermal resistance
Solder Temperatures: 260
o C for 10 s (maximum)
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead or RoHS Compliant annealed-
matte Tin plating solderable per MIL-STD-750
method 2026
POLARITY: Cathode indicated by band
MARKING: Part number and polarity diode symbol
WEIGHT: 1.5 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See “CASE 1” package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).
CASE 1
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