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參數(shù)資料
| 型號： | MV2115 |
| 廠商： | 樂山無線電股份有限公司 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Tuning Diode |
| 中文描述： | 硅調(diào)諧二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 61K |
| 代理商： | MV2115 |
LESHAN RADIO COMPANY, LTD.
MMBV2101~MMBV2109 –1/3
MV2101~MV2115
1
3
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101
MV2106
MV2109
MV2115
MV2104
MV2108
MV2111
These devices are designed in the popular PLASTIC PACKAGE for
high volumerequirements of FM Radio and TV tuning and AFC, general
frequency control andtuning applications.They provide solid–state reliability
in replacement of mechanical tuning methods. Also available in Surface
Mount Package up to 33pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance
—
10%
Complete Typical Design Curves
Silicon Tuning Diode
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Forward power Dissipation @T
A
= 25°C P
D
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBV2101LT1=M4G MMBV2107LT1=4W
MMBV2103LT1=4H MMBV2108LT1=4X
MMBV2105LT1=4U MMBV2109LT1=4J
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=1.0
μ
Adc)
Reverse Voltage Leakage Current
(V
R
=25Vdc,T
A
=25°C)
Diode Capacitance Temperature Coefficient
(V
R
=4.0Vdc,f=1.0MHz)
Symbol
V
R
I
F
MV21XX MMBV21XXLT1
30
200
280
2.8
+150
–55 to +150
Unit
Vdc
mAdc
m W
mW/°C
°C
°C
225
1.8
T
J
T
stg
Symbol
Min
Typ
Max
Unit
V
(BR)R
30
—
—
Vdc
I
R
—
—
0.1
μ
Adc
TC
C
—
280
—
ppm/°C
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
CATHODE
1
ANODE
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