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參數資料
| 型號： | MV409 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Silicon Tuning Diode |
| 中文描述： | 硅調諧二極管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 106K |
| 代理商： | MV409 |
LESHAN RADIO COMPANY, LTD.
1
3
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MMBV409LT1
MV409
These devices are designed forgeneral frequency control and tuning applications.
They provide solid- state reliability in replacement of mechanical tuning methods.
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Silicon Tuning Diode
3
CATHODE
1
ANODE
VOLTAGE VARIABLE
CAPACITANCE DIODES
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10
μ
Adc)
V
(BR)R
20
—
—
Vdc
Reverse Voltage Leakage Current
(V
R
= 15 Vdc)
I
R
—
—
0.1
μ
Adc
Diode Capacitance Temperature Coefficient
(V
R
= 3.0 Vdc, f = 1.0 MHz)
TC
C
—
300
—
ppm/
°
C
C
t
, Diode Capacitance
V
R
= 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
V
R
= 3.0 Vdc
f = 50 MHz
C
R
, Capacitance Ratio
C
3
/C
8
f = 1.0 MHz
(1)
Device
Min
Nom
Max
Min
Min
Max
MMBV409LT1, MV409
26
29
32
200
1.5
1.9
1. C
R
is the ratio of C
t
measured at 3 Vdc divided by C
t
measured at 8 Vdc.
MAXIMUM RATINGS
Rating
Symbol
MBV409
MMBV409LT1
Unit
Reverse Voltage
V
R
20
Vdc
Forward Current
I
F
200
mAdc
Forward Power Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
280
2.8
225
1.8
mW
mW/
°
C
Junction Temperature
T
J
+125
°
C
Storage Temperature Range
T
stg
–55 to +150
°
C
DEVICE MARKING
MMBV409LT1 = X5, MV409 = MV409
200
20
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