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參數(shù)資料
| 型號： | MVUPS120EE3 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-216AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, POWERMITE-1 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 115K |
| 代理商： | MVUPS120EE3 |
UPS120Ee3
1.0 A Schottky Barrier Rectifier
D E S C R I P T I O N
The Microsemi UPS120Ee3 Powermite
Schottky rectifier is RoHS
compliant and offers low leakage current and optimized forward voltage
characteristics with reverse blocking capabilities up to 20 Volt. They are
ideal for surface mount applications that operate at high frequencies.
In addition to its size advantages, Powermite
package features include a
full metallic bottom that eliminates possibility of solder flux entrapment
during assembly, and a unique locking tab acts as an efficient heat path
from die to mounting plane for external heat sinking with very low thermal
resistance junction to case (bottom). Its innovative design makes this
device ideal for use with automatic insertion equipment.
Low thermal resistance DO-216AA package
RoHS Compliant with e3 suffix part number
Guard-ring-die construction for transient
protection
Efficient heat path with Integral locking
bottom metal tab
Low leakage current
Full metallic bottom eliminates flux
entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with
MIL-PRF-19500 for JAN, JANTX, and
JANTXV are available by adding MQ, MX, or
MV prefixes respectively to part numbers.
For example, designate MXUPS120Ee3 for a
JANTX (consult factory for Tin-Lead plating).
Optional 100% avionics screening available
by adding MA prefix for 100% temperature
cycle, thermal impedance and 24 hours
HTRB (consult factory for Tin-Lead plating)
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
ABS OLUT E MAX IMUM RAT INGS AT 25o C
(UNLES S OT HERWIS E S PECIFIED)
Rating
Symbol
V
RRM
V
RWM
V
R
V
R (RMS)
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
20
V
RMS Reverse Voltage
Average Rectified Output Current (at rated
V
R
, T
C
=135oC)
Peak Repetitive Forward Current (at rated V
R
,
square wave, 100kHz, T
C
=135oC)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave
Voltage Rate of Change (rated V
R
, TJ =25oC)
14
V
I
o
1.0
A
I
FRM
2.0
A
I
FSM
50
A
dv/dt
10,000
V/μs
Storage Temperature
T
STG
-55 to +150
oC
Junction Temperature
T
J
-55 to +125
oC
DO-216
See further details and dimensions on last page
T HERMAL CHARACT ERIS T ICS
(UNLES S OT HERWIS E S PECIFIED)
Thermal Resistance
Junction-to-case (bottom)
Junction-to-ambient (1)
(1) When mounted on FR-4 PC board using 1 oz copper with recommended minimum foot print
R
θ
JC
R
θ
JA
15
240
oC/ Watt
oC/ Watt
K E Y F E A T U R E S
APPLICAT IONS /BENEFIT S
Switching and Regulating Power Supplies.
Silicon Schottky (hot carrier) rectifier for
minimal reverse voltage recovery
Elimination of reverse-recovery oscillations
to reduce need for EMI filtering
Charge Pump Circuits
Reduces reverse recovery loss with low I
RM
Small 8.45 mm
foot print
(See mounting pad details next page)
ME CHANICAL & PACK AGING
CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-
STD-750 method 2026 (consult factory for
Tin-Lead plating)
POLARITY: See figure (left)
MARKING: 20E
WEIGHT: 0.016 grams (approx.)
Package dimension on last page
Tape & Reel option: 12 mm tape per
Standard EIA-481-B, 3000 on 7 inch reel
and 12,000 on 13” reel
W
M
.
C
U
P
S
1
2
0
E
3
Microsemi
Copyright
2007
6-26-2007 Rev C
Page 1
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