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參數資料
| 型號： | MWT-H973 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | K BAND, GaAs, RF POWER, HEMFET |
| 文件頁數： | 1/2頁 |
| 文件大小： | 95K |
| 代理商： | MWT-H973 |
+27 dBm OUTPUT POWER AT 12 GHz
10 dB SMALL SIGNAL GAIN AT 12 GHz
0.3 MICRON REFRACTORY METAL/GOLD GATE
750 MICRON GATE WIDTH
CHOICE OF CHIP AND THREE PACKAGE TYPES
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
P1dB
SSG
PAE
Pmax
Output Power at 1 dB Compression
VDS= 6.0 V Idss= 0.8 IDS=170mA
Small Signal Gain
VDS= 6.0 V Idss= 0.8 IDS=170mA
12 GHz
dBm
dB
%
dBm
26.0
9.0
27.0
10.0
45
27.8
RF SPECIFICATIONS AT Ta = 25
°°°°°C
Idss
Recommended IDSS Range
for Optimum P1dB
12 GHz
mA
162-
258
DESCRIPTION
The MwT-H9 is a AlGaAs/InGaAs PHEMT device whose nominal quarter-micron gate length and 750 micron gate width make it ideally
suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range with a 0.5W power output while exhibiting low noise
figure. The chip is produced using MwT’s reliable metal system and all devices are screened to insure reliability. All chips are passivated
using MwT’s patented “Diamond-Like Carbon” process for increased durability, Designers can use MwT’s unique BIN selection feature to
choose devices from narrow Idss ranges, insuring consistent circuit operation.
97
67
97
75
419
98
75
292
CHIP THICKNESS = 125
DC SPECIFICATIONS AT Ta = 25
°°°°°C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Gm
Vp
BVGSO
BVGDO
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 2.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 5.0 mA
Gate-to-Source Breakdown Volt.
Igs= -0.5 mA
Gate-to-Drain Breakdown Volt.
Igd= -0.5 mA
mA
126
-1.2
282
mS
120
160
-3.0
V
°°°°°C/W
-6.0
-8.0
-12.0
70
175*
Lg
Rg
Rd
Ld
Cgd
GATE
DRAIN
Cgs
Cpg
Rds
Cds
Cpd
Ri
Rs
Ls
gm
tau
SOURCE
DEVICE EQUIVALENT CIRCUIT MODEL
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.10
nH
0.03
pF
0.50
1.2
pF
3.0
0.08
pF
170.0
mS
3.0
psec
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
VALUE
PARAMETER
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
0.60
0.04
nH
160.0
0.08
pF
0.8
0.10
pF
0.30
nH
Rth
Thermal
Resistance
MwT-H9
AlGaAs/InGaAs PHEMT
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
DC SPECIFICATIONS AT Ta = 25
°°°°°C
RF SPECIFICATIONS AT Ta = 25
°°°°°C
FEATURES
NOTE:
For Package information, please see supplimentary application note from our website at
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if
known, and screening level required.
ORDERING INFORMATION
Chip
MwT-H9
Package 70
MwT-H970
Package 71
MwT-H971
Package 73
MwT-H973
All Dimensions in Microns
MwT-H9 Chip, H971
MwT-H970, H973
*Overall Rth depends on case mounting.
MwT-H9
AlGaAs/InGaAs PHEMT
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM
210
Power Added Efficiency
VDS= 6.0 V Idss= 0.8 IDS=170mA
Output Power at 1dB Compression
VDS= 6.0 V Idss= 0.8 IDS=170mA
35
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