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參數資料
型號: MXMLL3824CE3TR
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: 齊納二極管
英文描述: 4.3 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
封裝: ROHS COMPLIANT, HERMETIC SEALED, LEADLESS, GLASS, MELF-2
文件頁數: 1/3頁
文件大?。?/td> 235K
代理商: MXMLL3824CE3TR
LEADLESS GLASS ZENER DIODES
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N3821UR-1 thru 1N3830AUR-1, e3 or
MLL3821 thru MLL3830A, e3
1N3
821
UR-1
thru
1N3830
AUR-1,e
3
or
MLL38
21
thr
u
MLL383
0A,e3
hr
u
MLL383
0A,e3
DESCRIPTION
APPEARANCE
This surface mountable zener diode series is similar to the lower voltage
1N3821 thru 1N3830 JEDEC registration except it is in a surface mount
DO-213AB package outline. It is an ideal selection for applications of high
density and low parasitic requirements. Due to its glass hermetic qualities
and enhanced metallurgical bonded internal construction, it is also well
suited for high reliability applications. This can be acquired by a source
control drawing (SCD), or simply by ordering device types with a MQ, MX
or MV prefix for equivalent screening to JAN, JANTX or JANTXV
respectively.
DO-213AB
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Leadless package for surface mount equivalent to
1N3821 thru 1N3830A.
Ideal for high-density mounting
Lower voltage selections of 3.3 V to 7.5 V
Hermetically sealed, double-slug glass construction
Metallurgically enhanced contact construction
Options for screening in accordance with MIL-PRF-
19500/115 for JAN, JANTX, and JANTXV with MQ, MX
or MV prefixes respectively for part numbers, e.g.
MX1N3821AUR-1, MV1N3828AUR-1, etc.
Axial lead “thru-hole” DO-13 packages per JEDEC
registration available as 1N3821A thru 1N3830A (see
separate data sheet with MIL-PRF-19500/115
qualification)
RoHS Compliant devices available by adding “e3” suffix
Regulates voltage over a broad operating current
and temperature range
Leadless package for surface mounting
Tight voltage tolerances available
Ideal for high-density mounting
Metallurgically enhanced internal contact design
for greater reliability and lower thermal resistance
Nonsensitive to ESD
Hermetically sealed glass package
Specified capacitance (see Figure 2)
Inherently radiation hard as described in
Microsemi MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Power dissipation at 25
C: 1.5 watts (also see derating
in Figure 1).
Operating and Storage temperature: -65
C to +175C
Thermal Resistance: 40
C/W junction to end cap, or
120
C/W junction to ambient when mounted on FR4 PC
board (1 oz Cu) with recommended footprint (see last
page)
Steady-State Power: 1.50 watts at end-cap
temperature TEC < 115
oC, or 1.25 watts at T
A = 25
C
when mounted on FR4 PC board and recommended
footprint as described for thermal resistance (also see
Figure 1)
Forward voltage @200 mA: 1.2 volts (maximum)
Solder Temperatures: 260
C for 10 s (max)
CASE: Hermetically sealed glass MELF package
TERMINALS: Tin-Lead (SN/Pb) or RoHS
compliant annealed matte-Tin (Sn) plating
solderable per MIL-STD-750, method 2026
POLARITY: Cathode indicated by band. Diode
to be operated with the banded end positive with
respect to the opposite end for Zener regulation
MARKING: Cathode band only
TAPE & REEL optional: Standard per EIA-481-1-
A with 12 mm tape, 1500 per 7 inch reel or 5000
per 13 inch reel (add “TR” suffix to part number)
WEIGHT: 0.05 grams
See package dimensions on last page
Microsemi
Scottsdale Division
Page 1
Copyright
2006
3-12-2006 REV C
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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