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參數資料
| 型號： | MXP4005 |
| 廠商： | MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP |
| 元件分類： | 光敏二極管 |
| 英文描述： | InGaAs/InP PIN Photo Diode |
| 中文描述： | PIN PHOTO DIODE |
| 封裝： | DIE-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 121K |
| 代理商： | MXP4005 |
Obsolete Product – not recommended for new design
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright
2001
Rev. 1.1
W
M
.
C
MXP4005 – 12.7 Gbps
InGaAs/InP PIN Photo Diode
O
P T O
- E
L E C T R O N I C
P
R O D U C T S
P
R O D U C T I O N
D
A T A
S
H E E T
D E S C R I P T I O N
Microsemi’s InGaAs/InP PIN Photo
Diode chips are ideal for high bandwidth
1310nm and 1550nm optical networking
applications.
The device series offers superior noise
performance and sensitivity due to their
planar construction and passivation.
The MXP400X series of photo
diodes are currently offered in die
form allowing manufacturers the
versatility
of
custom
configurations.
This device is ideal for manu-
facturers
of
optical
transponders, optical transmission
modules and combination PIN photo
diode – transimpedance amplifier.
Microsemi will assemble die on
submounts
and
gurations.
assembly
receivers,
custom
confi-
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
K E Y F E A T U R E S
High Responsivity
Low Dark Current
Extremely Low Capacitance
12GHz , High Bandwidth
Custom Sub-mounts
Large 40um Bond Pad
A P P L I C A T I O N S
1310nm CATV Optical Applications
1550nm DWDM Optical Applications
SONET/SDH (FEC), ATM
10Gigabit Ethernet, Fibre Channel
10Gbps NRZ or RZ modulation
Optical Test equipment
B E N E F I T S
Planar passivation
Low Contact Resistance
P R O D U C T H I G H L I G H T
M
X
P
4
0
0
5
Typical Spectral Responsivity
0.0
0.2
0.4
0.6
0.8
1.0
1.2
800
900 1000 1100 1200 1300 1400 1500 1600 1700
Wavelength (nm)
R
MXP4
MICROS
508um
508um
40um
±
Bond
Active Area
20um
508um
± 25um
150
± 25um
± 25um
45
Anod
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