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參數資料
| 型號： | MXTA42 |
| 廠商： | WEITRON INTERNATIONAL CO., LTD. |
| 英文描述： | NPN Plastic-Encapsulate Transistor |
| 中文描述： | npn型塑料封裝晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 62K |
| 代理商： | MXTA42 |
NPN Plastic-Encapsulate Transistor
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
VCEO
VCBO
VEBO
Value
300
300
5.0
Unit
Vdc
Vdc
Rating
IC
mAdc
Vdc
Collector Current-Continuous
500
1.FR-5=1.0 x 0.75 x 0.062 in.
MXTA42=A42
Device Marking
h t t p : / / w w w . w e i t r o n . c o m . t w
W E I T R O N
Maximum Ratings
( T
A
=25 C unless otherwise noted)
Total Device Dissipation FR-5 Board
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature Range
Characteristics
TJ,Tstg
R JA
PD
Symbol
Max
Unit
mW
mW/ C
C/W
C
Thermal Characteristics
(1)
500
4.0
250
-55 to +150
MXTA42
Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 μAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 μAdc, IC=0)
Collector Cutoff Current (VCB= 200 Vdc, IE=0)
Emitter Cutoff Current (VEB= 5.0 Vdc, IC
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
5.0
-
-
-
-
-
0.1
Vdc
Vdc
Vdc
uAdc
uAdc
300
300
0.25
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
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