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參數(shù)資料
| 型號(hào)： | N16T1630C2BZ2-55 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| 中文描述： | 16Mb的超低功耗CMOS SRAM的異步 |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大小： | 245K |
| 代理商： | N16T1630C2BZ2-55 |
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
(DOC#14-02-007 REV F ECN# 01-1103)
5
NanoAmp Solutions, Inc.
N16T1630C2B
Timing
Item
Symbol
-55
-70
Units
Min.
Max.
Min.
Max.
Read Cycle Time
t
RC
t
AA
t
CO
t
OE
55
70
ns
Address Access Time
55
70
ns
Chip Enable to Valid Output
55
70
ns
Output Enable to Valid Output
30
35
ns
Byte Select to Valid Output
t
LB
, t
UB
t
LZ
t
OLZ
t
BLZ
t
HZ
t
OHZ
t
BHZ
t
OH
55
70
ns
Chip Enable to Low-Z output
5
5
ns
Output Enable to Low-Z Output
5
5
ns
Byte Select to Low-Z Output
5
5
ns
Chip Disable to High-Z Output
0
25
0
25
ns
Output Disable to High-Z Output
0
25
0
25
ns
Byte Select Disable to High-Z Output
0
25
0
25
ns
Output Hold from Address Change
10
10
ns
Write Cycle Time
t
WC
t
CW
t
AW
t
BW
t
WP
t
AS
t
WR
t
WHZ
t
DW
t
DH
t
OW
55
70
ns
Chip Enable to End of Write
50
55
ns
Address Valid to End of Write
50
55
ns
Byte Select to End of Write
50
55
ns
Write Pulse Width
50
55
ns
Address Setup Time
0
0
ns
Write Recovery Time
0
0
ns
Write to High-Z Output
25
25
ns
Data to Write Time Overlap
25
25
ns
Data Hold from Write Time
0
0
ns
End Write to Low-Z Output
5
5
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| N16T1630C2BZ2-70 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ-55 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ-70 | 制造商:NANOAMP 制造商全稱(chēng):NANOAMP 功能描述:16Mb Ultra-Low Power Asynchronous CMOS SRAM |
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