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參數資料
| 型號： | NAND01GW4A2BV1E |
| 廠商： | 意法半導體 |
| 英文描述： | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| 中文描述： | 128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片 |
| 文件頁數： | 33/57頁 |
| 文件大小： | 410K |
| 代理商： | NAND01GW4A2BV1E |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in
Ta-
ble 14.
Table 14. Program, Erase Times and Program Erase Endurance Cycles
MAXIMUM RATING
Stressing the device above the ratings listed in
Ta-
ble 15., Absolute Maximum Ratings
, may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
reliability.
Refer
STMicroelectronics SURE Program and other rel-
evant quality documents.
also
to
the
Table 15. Absolute Maximum Ratings
Note: 1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may over-
shoot to V
DD
+ 2V for less than 20ns during transitions on I/O pins.
Parameters
NAND Flash
Unit
Min
Typ
Max
Page Program Time
200
500
μs
Block Erase Time
2
3
ms
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
10
years
Symbol
Parameter
Value
Unit
Min
Max
T
BIAS
Temperature Under Bias
–
50
125
°C
T
STG
Storage Temperature
–
65
150
°C
V
IO
(1)
Input or Output Voltage
1.8V devices
–
0.6
2.7
V
3 V devices
–
0.6
4.6
V
V
DD
Supply Voltage
1.8V devices
–
0.6
2.7
V
3 V devices
–
0.6
4.6
V
相關PDF資料 |
PDF描述 |
|---|---|
| NAND128R3A2BV1E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND128W4A0CV6T | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512R3A0BN6E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512R3A0CZB6T | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512R3A2BZA1F | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NAND01GW4A2BV1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW4A2BV1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW4A2BV6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW4A2BV6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW4A2BV6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
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