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參數資料
| 型號： | NBB-X-K1 |
| 廠商： | RF Micro Devices, Inc. |
| 英文描述： | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz |
| 中文描述： | 級聯寬帶GaAs MMIC放大器DC至4GHz |
| 文件頁數： | 2/10頁 |
| 文件大小： | 217K |
| 代理商： | NBB-X-K1 |
4-50
NBB-500
Rev A5 050414
Absolute Maximum Ratings
Parameter
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Exceeding any one or a combination of these limits may cause permanent damage.
Rating
+20
300
70
200
-45 to +85
-65 to +150
Unit
dBm
mW
mA
°C
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
Small Signal Power Gain, S21
V
D
=+3.9V, I
CC
=35mA, Z
0
=50
, T
A
=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 2.0GHz
f=2.0GHz to 4.0GHz
f=0.1GHz to 3.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
BW3 (3dB)
19.0
20.5
19.5
18.5
±0.8
1.70:1
1.45:1
1.65:1
4.2
dB
dB
dB
dB
16.0
Gain Flatness, GF
Input and Output VSWR
Bandwidth, BW
Output Power @
-1dB Compression, P1dB
GHz
12.3
14.0
3.2
+26.5
-17.0
3.9
-0.0015
dBm
dBm
dB
dBm
dB
V
dB/°C
f=2.0GHz
f=6.0GHz
f=3.0GHz
f=2.0GHz
f=0.1GHz to 10.0GHz
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
D
Gain Temperature Coefficient,
δ
G
T
/
δ
T
MTTF versus Temperature
@ I
CC
=35mA
Case Temperature
Junction Temperature
MTTF
Thermal Resistance
θ
JC
3.6
4.2
85
120
°C
°C
>1,000,000
hours
256
°C/W
J
-------–
T
V
D
I
CC
θ
JC
°
C Watt
(
)
=
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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