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參數資料
| 型號： | NCP1207DR2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 穩壓器 |
| 英文描述： | PWM Current-Mode Controller for Free Running Quasi-Resonant Operation |
| 中文描述： | 0.5 A SWITCHING CONTROLLER, PDSO8 |
| 封裝： | LEAD FREE, SOIC-8 |
| 文件頁數： | 3/18頁 |
| 文件大小： | 202K |
| 代理商： | NCP1207DR2G |
NCP1207
http://onsemi.com
3
Figure 2. Internal Circuit Architecture
+
V
CC
HV
GND
Drv
Demag
+
Fault
Mngt.
+
7.0
mA
To Internal
Supply
+
12 V, 10 V,
5.3 V (fault)
PON
4.5 s
Delay
+
+
5.0 V
OVP
/1.44
8.0 s
Blanking
+
5.0 s
Timeout
Demag
Demag
Overload
Timeout
Reset
S
R
S*
Q
R*
Q
380 ns
L.E.B.
/3
1.0 V
10 V
50 mV
CS
FB
200 A
when Drv
is OFF
Driver: src = 20
sink = 10
*S and R are level triggered whereas S is edge
triggered. R has priority over the other inputs.
V
CC
R
esd
R
int
4.2 V
SoftStart = 1 ms
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Maximum Voltage on all other pins except Pin 8 (HV), Pin 6 (V
CC
) Pin 5 (Drv) and
Pin 1 (Demag)
0.3 to 10
V
Maximum Current into all pins except V
CC
(6), HV (8) and Demag (1) when 10 V
ESD diodes are activated
5.0
mA
Maximum Current in Pin 1
Idem
+3.0/2.0
mA
Thermal Resistance, JunctiontoCase
R
JC
57
°
C/W
Thermal Resistance, JunctiontoAir, SOIC version
R
JA
178
°
C/W
Thermal Resistance, JunctiontoAir, PDIP version
R
JA
100
°
C/W
Maximum Junction Temperature
TJ
MAX
150
°
C
Temperature Shutdown
155
°
C
Hysteresis in Shutdown
30
°
C
Storage Temperature Range
60 to +150
°
C
ESD Capability, HBM Model (All pins except HV)
2.0
kV
ESD Capability, Machine Model
200
V
Maximum Voltage on Pin 8 (HV), Pin 6 (V
CC
) decoupled to ground with 10 F
V
HVMAX
500
V
Minimum Voltage on Pin 8 (HV), Pin 6 (V
CC
) decoupled to ground with 10 F
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
V
HVMIN
40
V
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