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參數(shù)資料
型號: NCP1400ASN50T1
廠商: ON SEMICONDUCTOR
元件分類: 穩(wěn)壓器
英文描述: 100 mA, Fixed Frequency PWM Step-Up Micropower Switching Regulator(微功率固定頻率脈寬調(diào)制升壓直流-直流交換器)
中文描述: 0.4 A SWITCHING REGULATOR, 216 kHz SWITCHING FREQ-MAX, PDSO5
封裝: TSOT-23, 5 PIN
文件頁數(shù): 12/16頁
文件大小: 133K
代理商: NCP1400ASN50T1
NCP1400A
http://onsemi.com
12
APPLICATION CIRCUIT INFORMATION
Figure 41. Typical Step–Up Converter Application
1
3
GND
4
CE
2
OUT
NC
LX
5
N
V
out
V
in
C1
10
μ
F
L1
D1
C2
68
μ
F
22
μ
H
Step–up Converter Design Equations
General step–up DC–DC converter designed to operate in
discontinuous conduction mode can be defined by:
Calculation
Equation
áááááááááááááááá
áááááááááááááááá
á
áááááááááááááááá
á
áááááááááááááááá
D
– Duty cycle
I
PK
– Peak inductor current
I
O
– Desired dc output current
V
in
– Nominal operating dc input voltage
V
out
– Desired dc output voltage
V
F
– Diode forward voltage
Assume saturation voltage of the internal FET switch is negligible.
T
áááá
áááá
á
áááááááááá
2L(V
I
PK
áááááááááá
á
V
in
t
on
á
á
in
on
V
V
)
External Component Selection
Inductor
Inductance values between 18
μ
H and 27
μ
H are the best
suitable values for NCP1400A. In general, smaller
inductance values can provide larger peak inductor current
and output current capability, and lower conversion
efficiency, and vice versa. Select an inductor with smallest
possible DCR, usually less than 1.0
, to minimize loss. It
is necessary to choose an inductor with saturation current
greater than the peak current which the inductor will
encounter in the application.
Diode
The diode is the largest source of loss in DC–DC
converters. The most importance parameters which affect
their efficiency are the forward voltage drop, V
F
, and the
reverse recovery time, trr. The forward voltage drop creates
a loss just by having a voltage across the device while a
current flowing through it. The reverse recovery time
generates a loss when the diode is reverse biased, and the
current appears to actually flow backwards through the
diode due to the minority carriers being swept from the P–N
junction. A schottky diode with the following characteristics
is recommended:
Small forward voltage, V
F
Small reverse leakage current
Fast reverse recovery time/switching speed
Rated current larger than peak inductor current,
I
rated
I
PK
Reverse voltage larger than output voltage,
V
reverse
V
out
0.3 V
Input Capacitor
The input capacitor can stabilize the input voltage and
minimize peak current ripple from the source. The value of
the capacitor depends on the impedance of the input source
used. Small ESR (Equivalent Series Resistance) Tantalum
or ceramic capacitor with value of 10
μ
F should be suitable.
Output Capacitor
The output capacitor is used for sustaining the output
voltage when the internal MOSFET is switched on and
smoothing the ripple voltage. Low ESR capacitor should be
used to reduce output ripple voltage. In general, a 47
μ
F to
68
μ
F low ESR (0.15
to
0.30
) Tantalum capacitor
should be appropriate.
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