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參數資料
| 型號： | NCP1729SN35T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 穩壓器 |
| 英文描述： | Switched Capacitor Voltage Inverter |
| 中文描述： | SWITCHED CAPACITOR CONVERTER, 54 kHz SWITCHING FREQ-MAX, PDSO6 |
| 封裝： | SOT-23, TSOP-6 |
| 文件頁數： | 2/22頁 |
| 文件大小： | 165K |
| 代理商： | NCP1729SN35T1 |
NCP1729
http://onsemi.com
2
MAXIMUM RATINGS*
Rating
Symbol
Value
Unit
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Thermal Resistance, JunctiontoAir
R
JA
256
°
C/W
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Output Current
I
100
mA
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Operating Junction Temperature
T
150
°
C
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values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
*ESD Ratings
ESD Machine Model Protection up to 200 V, Class B
ESD Human Body Model Protection up to 2000 V, Class 2
ELECTRICAL CHARACTERISTICS
(V
in
= 5.0 V, C
1
= 3.3 F, C
2
= 3.3 F, T
A
= 40
°
C to 85
°
C, typical values shown are for
T
A
= 25
°
C unless otherwise noted. See Figure 14 for Test Setup.)
Characteristic
Symbol
Min
Typ
Max
Unit
Operating Supply Voltage Range (SHDN = V
in
, R
L
= 10 k)
V
in
1.5 to 5.5
1.15 to 6.0
V
Supply Current Device Operating (SHDN = 5.0 V, R
L
=
T
A
= 25
°
C
T
A
= 85
°
C
)
I
in
122
128
200
200
A
Supply Current Device Shutdown (SHDN = 0 V)
T
A
= 25
°
C
T
A
= 85
°
C
I
SHDN
0.4
1.7
A
Oscillator Frequency
T
A
= 25
°
C
T
A
= 40
°
C to 85
°
C
f
OSC
24.5
19
33.5
45.6
54
kHz
Output Resistance (I
out
= 25 mA, Note 1)
R
out
26
50
Voltage Conversion Efficiency (R
L
=
)
V
EFF
99
99.9
%
Power Conversion Efficiency (R
L
= 1.0 k)
P
EFF
96
%
Shutdown Input Threshold Voltage (V
in
= 1.5 V to 5.5 V)
High State, Device Operating
Low State, Device Shutdown
V
th(SHDN)
0.6 V
in
0.5 V
in
V
Shutdown Input Bias Current
High State, Device Operating, SHDN = 5.0 V
T
A
= 25
°
C
T
A
= 85
°
C
Low State, Device Shutdown, SHDN = 0 V
T
A
= 25
°
C
T
A
= 85
°
C
I
IH
I
IL
5.0
100
5.0
100
pA
WakeUp Time from Shutdown (R
L
= 1.0 k)
1. Capacitors C
1
and C
2
contribution is approximately 20% of the total output resistance.
t
WKUP
1.0
ms
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