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參數資料
| 型號： | NCR169DRLRMG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | General Purpose Sensitive Gate Silicon Controlled Rectifier |
| 中文描述： | 0.8 A, 400 V, SCR, TO-92 |
| 封裝： | LEAD FREE, PLASTIC, CASE 029-11, TO-226AA, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 77K |
| 代理商： | NCR169DRLRMG |
Semiconductor Components Industries, LLC, 2005
October, 2005 Rev. 1
1
Publication Order Number:
NCR169D/D
NCR169D
General Purpose
Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-226AA package.
Features
Sensitive Gate Allows Direct Triggering by Microcontrollers and
Other Logic Circuits
OnState Current Rating of 0.8 Amperes RMS at 80
°
C
Surge Current Capability 10 Amperes
Immunity to dV/dt 20 V/
μ
sec Minimum at 110
°
C
Glass-Passivated Surface for Reliability and Uniformity
Device Marking: NCR169D, Date Code
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1.)
(T
J
=
40 to 110
°
C, Sine Wave, 50 to
60 Hz; Gate Open)
V
DRM,
V
RRM
400
Volts
On-State RMS Current
(T
C
= 80
°
C) 180
°
Conduction Angles
I
T(RMS)
0.8
Amp
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T
J
= 25
°
C)
I
TSM
10
Amps
Circuit Fusing Consideration (t = 10 ms)
I
2
t
0.415
A
2
s
Forward Peak Gate Power
(T
A
= 25
°
C, Pulse Width
1.0
μ
s)
P
GM
0.1
Watt
Forward Average Gate Power
(T
A
= 25
°
C, t = 20 ms)
P
G(AV)
0.10
Watt
Forward Peak Gate Current
(T
A
= 25
°
C, Pulse Width
1.0
μ
s)
I
GM
1.0
Amp
Reverse Peak Gate Voltage
(T
A
= 25
°
C, Pulse Width
1.0
μ
s)
V
GRM
5.0
Volts
Operating Junction Temperature Range
@ Rate V
RRM
and V
DRM
T
J
40 to
110
°
C
Storage Temperature Range
T
stg
40 to
150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCR
0.8 AMPERES RMS
400 VOLTS
TO92
(TO226AA)
CASE 029
STYLE 10
A
G
K
PIN ASSIGNMENT
1
2
3
Gate
Anode
Cathode
K
G
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
A
L
Y
WW = Work Week
= PbFree Package
(Note: Microdot may be in either location)
= Assembly Location
= Wafer Lot
= Year
NCR
169D
ALYWW
1
2
3
http://onsemi.com
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