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參數(shù)資料
| 型號(hào)： | NE1280400 |
| 廠商： | NEC Corp. |
| 英文描述： | Medium Power Amplifier HJ-FET chips(中等功率放大器結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | 中等功率放大器黃建忠場(chǎng)效應(yīng)管芯片（中等功率放大器結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 34K |
| 代理商： | NE1280400 |
1996
PRELIMINARY DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE1280 SERIES
K-BAND MEDIUM POWER AMPLIFIE
N-CHANNEL HJ-FET CHIPS
DESCRIPTION
The NE1280 series is medium power HJ-FET chips
which offer high output power and high gain for telecom
transmit power amplifier applications to 30 GHz.
NE1280100 is one cell die of 450
μ
m gate width,
offering 0.1 W output power. NE1280200 is two cells of
900
μ
m gate width, offering 0.2 W output power.
NE1280400 is four cells of 1.8
μ
m gate width, offering
0.4 W output power.
The devices incorporate WSi/Au gate to get high gain
and silicon nitride glassivation for superior scratch resistance
and mechanical protection.
Via hole source grounding result in superior RF
performance. To reduce the thermal resistance, the
devices have a PHS. (Plated Heat Sink)
NEC’s strigent quality assurance and test procedures
assure the highest reliability and performance.
FEATURES
Class A operation
High power output
High liniar gain
High reliability
Document No. P10977EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
CHIP DIMENSIONS (unit:
μ
m)
460
500
NE1280100
460
NE1280200
510
NE1280400
460
980
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NE12CT2 | 制造商:Schneider Electric 功能描述:NEUTRAL CURRENT TRANSFORMER, UNRATED |
| NE12FAAH0-0-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N e u t r i k ?? P a r t N u m b e r G u i d e |
| NE12FAH0-0-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N e u t r i k ?? P a r t N u m b e r G u i d e |
| NE12MAAH0-0-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N e u t r i k ?? P a r t N u m b e r G u i d e |
| NE12MAH0-0-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N e u t r i k ?? P a r t N u m b e r G u i d e |
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