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參數(shù)資料
| 型號(hào)： | NE52118-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
| 中文描述： | 募到S波段低噪聲放大器npn型GaAs HBT的 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 63K |
| 代理商： | NE52118-T1 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
GaAs HETEROJUNCTION BIPOLAR TRANSISTOR
NE52118
L to S BAND LOW NOISE AMPLIFIER
NPN GaAs HBT
Document No. P14544EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
1999
FEATURES
For Low Noise & High Gain amplifiers
NF = 1.0 dB TYP. G
a
= 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, V
CE
= 2 V, I
C
= 3 mA, Z
S
= Z
L
= 50
)
OIP
3
= 15 dBm TYP. (@f = 2 GHz, V
CE
= 2 V, I
C
= 3 mA, Z
S
= Z
L
= 50
)
4-pin super minimold package
Grounded Emitter Transistor
ORDERING INFORMATION (PLAN)
Part Number
Package
Marking
Supplying Form
NE52118-T1
4-pin super minimold
V41
Embossed tape 8 mm wide.
Pin 3, pin 4 face to perforation side of the tape.
Qty 3 kp/reel.
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE52118)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Emitter Voltage
V
CEO
5.0
V
Collector to Base Voltage
V
CBO
3.0
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
7
mA
Base Current
I
B
0.3
mA
Total Power Dissipation
P
tot
30
mW
Junction Temperature
T
j
+125
°C
Storage Temperature
T
stg
–65 to +125
°C
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