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參數資料
| 型號： | NE5500179A |
| 廠商： | NEC Corp. |
| 英文描述： | SILICON POWER MOS FET |
| 中文描述： | 硅功率MOS FET |
| 文件頁數： | 1/11頁 |
| 文件大小： | 66K |
| 代理商： | NE5500179A |
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10118EJ01V1DS (1st edition)
(Previous No. P15190EJ1V0DS00)
Date Published April 2002 CP(K)
Printed in Japan
SILICON POWER MOS FET
NE5500179A
4.8 V OPERATION SILICON RF POWER LD-MOS FET
FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS
DATA SHEET
NEC Corporation 1999
NEC Compound Semiconductor Devices 2002
The mark
!
shows major revised points.
DESCRIPTION
The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier
for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology (NEC’s
0.6
μ
m WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0
dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27
dBm output power with 50% pozwer added efficiency at 3.5 V, respectively.
FEATURES
High output power
High power added efficiency :
η
add
= 55% TYP. (V
DS
= 4.8 V, I
Dset
= 200 mA, f = 1.9 GHz, P
in
= 20 dBm)
High linear gain
: G
L
= 14.0 dB TYP. (V
DS
= 4.8 V, I
Dset
= 200 mA, f = 1.9 GHz, P
in
= 10 dBm)
Surface mount package
: 5.7
×
5.7
×
1.1 mm MAX.
Single supply
: V
DS
= 3.0 to 6.0 V
: P
out
= 30.0 dBm TYP. (V
DS
= 4.8 V, I
Dset
= 200 mA, f = 1.9 GHz, P
in
= 20 dBm)
APPLICATIONS
Digital cellular phones
: 4.8 V driver amplifier for GSM 1 800/ GSM 1 900 class 1 handsets, or 4.8 V final stage
amplifier
: 3.5 V final stage amplifier for DECT
: General purpose amplifiers for 1.6 to 2.5 GHz TDMA applications
Digital cordless phones
Others
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
NE5500179A-T1
79A
R1
12 mm wide embossed taping
Gate pin face the perforation side of the tape
Qty 1 kpcs/reel
Remark
To order evaluation samples, consult your NEC sales representative.
Part number for sample order: NE5500179A
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
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PDF描述 |
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| NE5500179A-T1 | SILICON POWER MOS FET |
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| NE5511279A | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NE5500179A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:SILICON POWER MOS FET |
| NE5500179A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS |
| NE5500234-AZ | 功能描述:MOSFET LD N-CH 4.8V 400MA SOT89 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| NE5500234-T1-AZ | 功能描述:MOSFET LD N-CH 4.8V 400MA SOT89 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| NE5500479A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
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