- 您現在的位置：買賣IC網 > PDF目錄361113 > NE68030-T1 (NEC Corp.) NECs NPN SILICON HIGH FREQUENCY TRANSISTOR PDF資料下載
參數資料
| 型號： | NE68030-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 鄰舍NPN硅高頻晶體管 |
| 文件頁數： | 1/19頁 |
| 文件大小： | 246K |
| 代理商： | NE68030-T1 |
Both the chip and micro-x versions are suitable for applications
up to 6 GHz. The NE680 die is also available in six different low
cost plastic surface mount package styles. The NE680's high
f
T
makes it ideal for low voltage/low current applications, down
to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is
35 mA. For higher current applications see the NE681 series.
recommended for new design.
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
recommended for new design.
recommended for new design.
recommended for new design.
NE68035
recommended for new design.
Please call sales office for
25
6V, 5 mA
3V, 5 mA
Please call sales office for
Please call sales office for
Please call sales office for
Please call sales office for
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
NE680
SERIES
NEC's NE680 series of NPN epitaxial silicon transistors is
designed for low noise, high gain and low cost applications.
300 500 1000 2000 3000
.5
1.0
1.5
2.0
2.5
20
15
10
5
N
A
A
Frequency, f (GHz)
00 (CHIP)
35 (MICRO-X)
E
B
DESCRIPTION
FEATURES
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 10 GHz
LOW NOISE FIGURE:
1.7 dB at 2 GHz
2.6 dB at 4 GHz
HIGH ASSOCIATED GAIN:
12.5 dB at 2 GHz
8.0 dB at 4 GHz
EXCELLENT LOW VOLTAGE
LOW CURRENT PERFORMANCE
18 (SOT 343 STYLE)
19 (3 PIN ULTRA
SUPER MINI MOLD)
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California Eastern Laboratories
相關PDF資料 |
PDF描述 |
|---|---|
| NE68033-T1B | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68039-T1 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68039R-T1 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE680M03 | NPN SILICON TRANSISTOR |
| NE68518-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NE68030-T1-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68030-T1-R44-A | 功能描述:射頻雙極小信號晶體管 NPN Silicon AMP Oscilltr Transist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68030-T1-R45-A | 功能描述:射頻雙極小信號晶體管 NPN Silicon AMP Oscilltr Transist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68033 | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68033-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。