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參數資料
| 型號： | NE685M03 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁數： | 1/17頁 |
| 文件大?。?/td> | 176K |
| 代理商： | NE685M03 |
details:
NEC's family of high frequency, low cost, surface mount
devices are well suited for portable wireless communications
and cellular radio applications.
from this datasheet are not
The following part numbers
LOW COST
SMALL AND ULTRA SMALL SIZE PACKAGES
LOW VOLTAGE/LOW CURRENT OPERATION
HIGH GAIN BANDWIDTH PRODUCT:
f
T
of 12 GHz
NOISE FIGURES OF 1.5 dB AT 2.0 GHZ
The following part numbers
The following part numbers
The following part numbers
The following part numbers
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
NE68539R
PART NUMBER
1
EIAJ
2
REGISTERED NUMBER
PACKAGE OUTLINE
NE68518
2SC5015
18
NE68519
2SC5010
19
NE68530
2SC4959
30
NE68533
2SC4955
33
NE68539/39R
2SC4957
39
SYMBOLS
f
T
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Gain Bandwidth Product at
V
CE
= 3V, I
C
= 10 mA, f = 2.0 GHz
GHz
12
Minimum Noise Figure at
V
CE
= 3 V, I
C
= 3 mA, f = 2.0 GHz
dB
1.5
2.5
Associated Gain at
V
CE
= 3V, I
C
= 3 mA, f = 2.0 GHz
dB
8.5
Maximum Available Gain at
V
CE
= 3 V, I
C
= 10 mA, f = 2.0 GHz
dB
12
Insertion Power Gain at
V
CE
= 3V, I
C
=10 mA, f = 2.0 GHz
dB
9
11
7
Forward Current Gain
3
at
V
CE
= 3 V, I
C
= 10 mA
75 110
150
75
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
μ
A
0.1
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
μ
A
0.1
Feedback Capacitance at
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
pF
0.3
0.5
Total Power Dissipation
mW
150
Thermal Resistance
(Junction to Ambient)
°
C/W
833
Thermal Resistance(Junction to Case)
°
C/W
200
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW
≤
350
μ
s, duty cycle
≤
2%.
4. The emitter terminal should be connected to the ground terminal
of the 3 terminal capacitance bridge.
12
12
12
12
NF
MIN
1.5
2.5
1.5
2.5
1.5
2.5
1.5
2.5
G
NF
7.5
7
7
7.5
MAG
11
10
10.5
11
|S
21E
|
2
9
7
8.5
7
8
9
10
h
FE
110
150
75
110
150
75
110
150
75
110
150
I
CBO
0.1
0.1
0.1
0.1
I
EBO
0.1
0.1
0.1
0.1
C
RE4
0.4
0.7
125
0.4
0.7
150
0.4
0.7
180
0.3
0.5
180
P
T
R
TH(J-A)
1000
200
833
200
620
200
620
200
R
TH(J-C)
SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
NE685
SERIES
FEATURES
30 (SOT 323 STYLE)
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
18 (SOT 343 STYLE)
39 (SOT 143 STYLE)
33 (SOT 23 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
39R (SOT 143R STYLE)
DESCRIPTION
The NE685 series of high f
T
(12 GHz) devices is suitable for
very low voltage/low current, low noise applications. These
products are ideal for applications up to 2.4 GHz where low
cost, high gain, low voltage, and low current are prime con-
cerns.
California Eastern Laboratories
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NE685M03-A | 功能描述:射頻雙極小信號晶體管 NPN Lo Noise Hi Gain RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE685M03-T1-A | 功能描述:射頻雙極小信號晶體管 NPN Lo Noise Hi Gain RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE685M13 | 功能描述:射頻雙極小信號晶體管 NPN Lo Noise Hi Gain RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE685M13-A | 功能描述:射頻雙極小信號晶體管 NPN Lo Noise Hi Gain RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE685M13-T3 | 制造商:California Eastern Laboratories (CEL) 功能描述:NPN Silicon Amplifier and Oscillator Transistor |
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