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參數資料
| 型號： | NE68733 |
| 廠商： | NEC Corp. |
| 英文描述： | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 表面貼裝NPN硅高頻晶體管 |
| 文件頁數： | 1/21頁 |
| 文件大小： | 196K |
| 代理商： | NE68733 |
PART NUMBER
1
EIAJ
2
REGISTERED NUMBER
PACKAGE OUTLINE
DESCRIPTION
from this datasheet are not
The following part numbers
HIGH GAIN BANDWIDTH PRODUCT:
f
T
of 13 GHz
AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
The following part numbers
The following part numbers
The following part numbers
The following part numbers
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
NE68739
NE68739R
NE68718
2SC5185
18
NE68719
2SC5186
19
NE68730
2SC5184
30
NE68733
2SC5182
33
NE68739/39R
2SC5183/83R
39/39R
SYMBOLS
f
T
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Gain Bandwidth Product at
V
CE
= 2 V, I
C
= 20 mA, f = 2.0 GHz
GHz
10
13
9
Gain Bandwidth Product at
V
CE
= 1 V, I
C
= 10 mA, f = 2.0 GHz
GHz
8
11
7
Minimum Noise Figure at
V
CE
= 2 V, I
C
= 3 mA, f = 2.0 GHz
dB
1.3
2.0
Minimum Noise Figure at
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
dB
1.3
2.0
Insertion Power Gain at
V
CE
= 2V, I
C
=20 mA, f = 2.0 GHz
dB
8
11
8.5
Insertion Power Gain at
V
CE
= 1V, I
C
=10 mA, f = 2.0 GHz
dB
7.5
9
6
Forward Current Gain
3
at
V
CE
= 2 V, I
C
= 20 mA
70
140
70
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
nA
100
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
nA
100
Feedback Capacitance at
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
pF
0.3
0.6
Total Power Dissipation
mW
90
Thermal Resistance
(Junction to Ambient)
°
C/W
833
Thermal Resistance
(Junction to Case)
°
C/W
3. Pulsed measurement, PW
≤
350
μ
s, duty cycle
≤
2%.
4. The emitter terminal should be connected to the ground terminal
11
9
11
9
12
7.5
10
f
T
9
7
9
7
10
7
8.5
NF
MIN
1.3
2.0
1.3
2.0
1.3
2.0
1.3
2.0
NF
MIN
1.3
2.0
1.3
2.0
1.3
2.0
1.3
2.0
|S
21e
|
2
10
7
8.5
7
8.5
7.5
10
|S
21e
|
2
7.5
6
7.5
6
7.5
7
8.5
h
FE
140
70
140
70
140
70
140
I
CBO
100
100
100
100
I
EBO
100
100
100
100
C
RE4
0.4
0.8
90
0.4
0.8
90
0.4
0.8
90
0.4
0.8
90
P
T
R
TH(J-A)
1250
833
625
625
R
TH(J-C)
SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
NE687
SERIES
FEATURES
30 (SOT 323 STYLE)
18 (SOT 343 STYLE)
39 (SOT 143 STYLE)
33 (SOT 23 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
39R (SOT 143R STYLE)
The NE687 series of NPN epitaxial silicon transistors are
designed for low cost, low noise applications. Excellent perfor-
mance at low voltage/low current makes this series an ideal
choice for portable wireless applications at 1.6, 1.9 and 2.4
GHz. The NE687 die is available in six different low cost plastic
surface mount package styles.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
LOW NOISE:
1.3 dB AT 2.0 GHz
LOW VOLTAGE OPERATION
EASY TO MATCH
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
California Eastern Laboratories
of the 3 terminal capacitance bridge.
相關PDF資料 |
PDF描述 |
|---|---|
| NE68733-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68739 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68739-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE6873939R | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68739R-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NE68733-T1 | 制造商:CEL 制造商全稱:CEL 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68739 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE6873939R | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68739R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143R |
| NE68739R-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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