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參數資料
| 型號： | NE76038 |
| 廠商： | NEC Corp. |
| 英文描述： | LOW NOISE L TO Ku-BAND GaAs MESFET |
| 中文描述： | 低噪聲L降至KU波段GaAs MESFET器件 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 40K |
| 代理商： | NE76038 |
PART NUMBER
PACKAGE OUTLINE
NE76038
38
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
OPT
1
Optimum Noise Figure at V
DS
= 3 V, I
DS
= 10 mA
f = 4 GHz
f = 12 GHz
dB
dB
0.8
1.8
1.2
G
A
Associated Gain at V
DS
= 3 V, I
DS
= 10 mA
f = 4 GHz
f = 12 GHz
dB
dB
12.0
13.0
7.5
I
DSS
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0 V
mA
15
30
50
V
P
Pinch-off Voltage at V
DS
= 3 V, I
DS
= 0.1 mA
V
-3.0
-0.8
-0.5
g
m
Transconductance at V
DS
= 3 V, I
DS
= 10 mA
mS
μ
A
30
40
70
I
GSO
Gate to Source Leakage Current at V
GS
= -3 V
10
Note:
1. Typical values of noise figures are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit
with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go"
screening test with the fixture tuned for the "generic" type but not for each specimen.
NE76038
LOW NOISE
L TO Ku-BAND GaAs MESFET
FEATURES
LOW NOISE FIGURE:
1.8 dB typical at 12 GHz
HIGH ASSOCIATED GAIN:
7.5 dB typical at 12 GHz
L
G
= 0.3
μ
m, W
G
= 280
μ
m
LOW COST PLASTIC PACKAGING
TAPE & REEL PACKAGING OPTION AVAILABLE
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 3 V, I
DS
= 10 mA
Frequency, f (GHz)
Ga
NF
1 10 20
4
3.5
3
2.5
2
1.5
1
0.5
0
24
21
18
15
12
9
6
3
0
N
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
DESCRIPTION
NE76038 is a high performance gallium arsenide metal
semiconductor field effect transistor housed in a plastic
package. Its low noise figure makes this device appropriate
for use in the second or third stages of low noise amplifiers
operating in the 1 - 14 GHz frequency range. The device is
fabricated using ion implantation for improved RF and DC
performance, reliability, and uniformity. These devices fea-
ture a recessed 0.3 micron gate and triple epitaxial technol-
ogy.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
A
A
California Eastern Laboratories
相關PDF資料 |
PDF描述 |
|---|---|
| NE76038-T1 | LOW NOISE L TO Ku-BAND GaAs MESFET |
| NE76084S | LOW NOISE L TO Ku BAND GaAs MESFET |
| NE76100 | ACB 5C 5#16S PIN PLUG |
| NE76184A-T1 | GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
| NE76184A | GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NE76038-T1 | 功能描述:MOSFET DISC BY NEC 5/99 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE76084 | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE76084S | 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE L TO Ku BAND GaAs MESFET |
| NE76084-SL | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE76084-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
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