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參數資料
| 型號： | NE76184A-SL |
| 廠商： | NEC Corp. |
| 英文描述： | GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
| 中文描述： | 一般用途場效應管N溝道砷化鎵場效應晶體管 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 65K |
| 代理商： | NE76184A-SL |
GaAs MES FET
NE76184A
DESCRIPTION
NE76184A is a N-channel GaAs MES FET housed in ce-
ramic package. The device is fabricated by ion implantation for
improved RF and DC performance reliability and uniformity. Its
excellent low noise and high associated gain make it suitable
for DBS, TVRO, GPS and another commercial systems.
FEATURES
Low noise figure & High associated gain
NF = 0.8 dB TYP., G
a
= 12 dB TYP. at f = 4 GHz
ORDERING INFORMATION
PART NUMBER
SUPPLYING
FORM
LEAD LENGTH
NE76184A-SL
STICK
L = 1.7 mm MIN.
NE76184A-T1
NE76184A-T1A
Tape & reel
L = 1.0
±
0.2 mm
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GSO
V
GDO
I
D
P
tot
T
ch
T
stg
5.0
–5.0
–6.0
100
300
150
V
V
V
mA
mW
C
C
–65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Gate to Source Leak Current
I
GSO
–
–
10
μ
A
V
GS
= –5 V
Saturated Drain Current
I
DSS
30
–
100
mA
V
DS
= 3 V, V
GS
= 0
Gate to Source Cutoff Voltage
V
GS (off)
–0.5
–
–3.0
V
V
DS
= 3 V, I
D
= 100
μ
A
Transconductance
g
m
20
45
–
mS
V
DS
= 3 V, I
D
= 10 mA
Noise Figure
NF
–
0.8
1.4
dB
V
DD
= 3 V
I
D
= 10 mA
f = 4 GHz
Associated Gain
G
a
–
12
–
dB
Power Gain
G
s
–
6
–
dB
f = 12 GHz
I
DSS
rank is specified as follows. (K: 30 to 100 mA, N: 30 to 65 mA, M: 55 to 100 mA)
Document No. P10852EJ2V0DS00 (2nd edition)
(Previous No. TC-2303)
Data Published October 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
L
L
1
L
2
4
3
0.5 TYP.
L
0
J
0
1
1. Source
2. Drain
3. Source
4. Gate
1
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
1991
DATA SHEET
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| NE76184A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
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