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參數資料
| 型號： | NESG2046M33-A |
| 廠商： | NEC Corp. |
| 英文描述： | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION |
| 中文描述： | 鄰舍npn型硅鍺晶體管低噪聲，高增益放大 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 118K |
| 代理商： | NESG2046M33-A |
NESG2046M33
NEC's NPN SiGe TRANSISTOR
FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
California Eastern Laboratories
IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
NF = 0.8 dB TYP., G
a
= 11.5 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
HIGH BREAKDOWN VOLTAGE TECHNOLOGY
FOR SIGE TRANSISTORS
:
V
CEO
(absolute maximum ratings) = 5.0 V
3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
FEATURES
PRELIMINARY DATA SHEET
ORDERING INFORMATION
Remark
To order evaluation samples, contact your nearby sales of
fi
ce.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(T
A
=+25oC)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V
CBO
13
V
Collector to Emitter Voltage
V
CEO
5
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
40
mA
Total Power Dissipation
P
tot
Note
130
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
PART NUMBER
QUANTITY
SUPPLYING FORM
NESG2046M33-A
50 pcs (Non reel)
8 mm wide embossed taping
Pin 2 (Base) face the perforation side of the tape
NESG2046M33-T3-A
10 kpcs/reel
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