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參數資料
| 型號： | NJD2873T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon DPAK For Surface Mount Applications |
| 中文描述： | 2 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 50K |
| 代理商： | NJD2873T4 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 3
1
Publication Order Number:
NJD2873T4/D
NJD2873T4
Plastic Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Designed for highgain audio amplifier applications.
Features
PbFree Package is Available
High DC Current Gain
h
FE
= 120 (Min) @ I
C
= 500 mA
= 40 (Min) @ I
C
= 2 A
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 0.3 Vdc (Max) @ I
C
= 1 A
High CurrentGain Bandwidth Product
f
T
= 65 MHz (Min) @ I
C
= 100 mA
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
Machine Model, C
8000 V
400 V
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorBase Voltage
V
CB
50
Vdc
CollectorEmitter Voltage
V
CEO
50
Vdc
EmitterBase Voltage
V
EB
5
Vdc
Collector Current
Continuous
Peak
I
C
2
3
Adc
Base Current
I
B
0.4
Adc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
12.5
0.1
W
W/
°
C
Total Device Dissipation @ T
A
= 25
°
C*
Derate above 25
°
C
P
D
1.4
0.011
W
W/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to
+150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
JunctiontoCase
JunctiontoAmbient*
R
JC
R
JA
10
89.3
°
C/W
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
Device
Package
Shipping
ORDERING INFORMATION
NJD2873T4
DPAK
2500 Units / Reel
SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
12.5 WATTS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NJD2873T4G
DPAK
(PbFree)
2500 Units / Reel
MARKING
DIAGRAM
Y
WW
= Year
= Work Week
DPAK
CASE 369C
STYLE 1
YWW
J
2873
12
3
4
http://onsemi.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NJD2873T4/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Silicon DPAK for Surface Mount Applications |
| NJD2873T4_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Power Transistors |
| NJD2873T4G | 功能描述:兩極晶體管 - BJT 2A 50V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NJD2873T4G-CUT TAPE | 制造商:ON 功能描述:NJD Series 50 V 2 A Tab Mount NPN Silicon Plastic Power Transistor - TO-252 |
| NJD35N04G | 功能描述:達林頓晶體管 POWER DARL TRANSIST RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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