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參數(shù)資料
| 型號： | NMSD200B01-7 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE |
| 中文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 182K |
| 代理商： | NMSD200B01-7 |
Lead-free Green
DS30911 Rev. 2 - 2
1 of 8
NMSD200B1
www.diodes.com
Diodes Incorporated
Characteristic
Symbol
P
d
P
der
I
out
Value
200
1.6
200
Unit
mW
mW/°C
mA
Power Dissipation (Note 3)
Power Derating Factor above 25 C
Output Current
General Description
NMSD200B01 is best suited for switching voltage regulator
and power management applications. It improves efficiency
and reliability of DC-DC converters used in Voltage Regulator
Modules (VRM) and can support continuous maximum current
of 200mA. It features an ESD protected discrete N-MOSFET
with low on-resistance and a discrete Schottky diode with low
forward drop. It reduces component count, consumes less
space and minimizes parastic losses. The component devices
can be used as a part of a circuit or as a stand alone discrete
device.
@ T
A
= 25 C unless otherwise specified
C
A
S
NC
D1
SD103AWS
G
C_D1
D_Q1
Q1
DMN601K
D
S_Q1
1
2
3
4
5
6
SCHOTTKY
A_D1
G_Q1
NMOS
NMSD200B01
200 mA SYNCHRONOUS RECTIFIER FEATURING
N-MOSFET AND SCHOTTKY DIODE
Features
Thermal Characteristics
Fig. 1: SOT-363
N-MOSFET with ESD Gate Protection
N-MOSFET with Low On-Resistance (R
DS(ON)
)
Low V
f
Schottky Diode
Low Static, Switching and Conduction Losses
Good dynamic performance
Surface Mount Package Suited for Automated Assembly
Lead Free By Design/ROHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL- STD -202, Method 208
Marking & Type Code Information: See Page 7
Ordering Information: See Last Page
Weight: 0.016 grams (approximate)
Fig 2 : Schematic and Pin Configuration
Sub-Components
DMN601K_DIE (ESD Protected)
SD103AWS_DIE
Reference
Q1
D1
Device Type
N-MOSFET
Schottky Diode
Figure
2
2
Maximum Ratings, Total Device
Characteristic
Symbol
T
j
, T
stg
Value
-55 to +150
Unit
C
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of N-MOSFET)
R
JA
625
C/W
Notes: 1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
1
2
3
4
5
6
N
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