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參數資料
| 型號： | NP34N055IHE |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關功率場效應晶體管 工業級 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 68K |
| 代理商： | NP34N055IHE |
1999,2000
MOS FIELD EFFECT TRANSISTOR
NP34N055HHE, NP34N055IHE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D14153EJ3V0DS00 (3rd edition)
March 2001 NS CP(K)
The mark
#
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP34N055HHE
TO-251
NP34N055IHE
TO-252
DESCRIPTION
These products are N-Channel MOS Field Effect Tran-
sistors designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
R
DS(on)
= 19 m
MAX. (V
GS
= 10 V, I
D
= 17 A)
Low C
iss
: C
iss
= 1600 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage
V
DSS
55
V
Gate to Source Voltage
V
GSS
±20
V
Drain Current (DC)
Drain Current (Pulse)
Note1
I
D(DC)
±34
A
I
D(pulse)
±136
A
Total Power Dissipation (T
A
= 25 °C)
P
T
1.2
W
Total Power Dissipation (T
C
= 25 °C)
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
P
T
88
W
I
AS
34 / 27 / 10
A
E
AS
11 / 72 / 100
mJ
Channel Temperature
T
ch
175
°C
Storage Temperature
T
stg
–55 to + 175
°C
Notes1.
PW
≤
10
μ
s, Duty cycle
≤
1 %
2.
Starting T
ch
= 25 °C, R
G
= 25
,
V
GS
= 20 V
→
0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th(ch-C)
R
th(ch-A)
1.70
125
°C/W
°C/W
(TO-251)
(TO-252)
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相關代理商/技術參數 |
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|---|---|
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