- 您現在的位置：買賣IC網 > PDF目錄299559 > NP80N055KHE 80 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PDF資料下載
參數資料
| 型號： | NP80N055KHE |
| 元件分類： | JFETs |
| 英文描述： | 80 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZK, TO-263, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 77K |
| 代理商： | NP80N055KHE |
MOS FIELD EFFECT TRANSISTOR
NP80N055CHE,NP80N055DHE,NP80N055EHE,NP80N055KHE
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14096EJ6V0DS00 (6th edition)
Date Published
December 2002 NS CP(K)
Printed in Japan
The mark 5
5
5 shows major revised points.
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
DESCRIPTION
These products are N-channel MOS Field Effect Tansistor
designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 11 m
MAX. (VGS = 10 V, ID = 40 A)
Low Ciss : Ciss = 2400 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Note1
ID(DC)
±80
A
Drain Current (Pulse)
Note2
ID(pulse)
±200
A
Total Power Dissipation (TA = 25°C)
PT
1.8
W
Total Power Dissipation (TC = 25°C)
PT
120
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–55 to +175
°C
Single Avalanche Current
Note3
IAS
45 / 31 / 10
A
Single Avalanche Energy
Note3
EAS
2.0 / 96 / 100
mJ
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
2. PW
≤ 10
s, Duty cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25
, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.25
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP80N055CHE
TO-220AB
NP80N055DHE
TO-262
NP80N055EHE
TO-263 (MP-25ZJ)
NP80N055KHE
TO-263 (MP-25ZK)
(TO-220AB)
(TO-262)
(TO-263)
5
相關PDF資料 |
PDF描述 |
|---|---|
| NP80N06CLD | 80 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| NP84N075MUE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP84N075NUE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP84N075NUE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N04CHE-S12-AZ | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NP80N055KHE-E1-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP80N055KHE-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP80N055KLE | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP80N055KLE-E1-AY | 功能描述:MOSFET N-CH 55V 80A TO-263 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NP80N055KLE-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
發布緊急采購，3分鐘左右您將得到回復。