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參數(shù)資料
| 型號： | NP86N04NHE-S18-AY |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場效應(yīng)晶體管的開關(guān)N溝道功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 221K |
| 代理商： | NP86N04NHE-S18-AY |
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confirm that this is the latest version.
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sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
NP86N04EHE, NP86N04KHE
NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14235EJ4V0DS00 (4th edition)
Date Published October 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1999, 2000, 2007
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP86N04EHE-E1-AY
Note1, 2
NP86N04EHE-E2-AY
Note1, 2
TO-263 (MP-25ZJ) typ. 1.4 g
NP86N04KHE-E1-AY
Note1
NP86N04KHE-E2-AY
Note1
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
NP86N04CHE-S12-AZ
Note1, 2
Sn-Ag-Cu
TO-220 (MP-25) typ. 1.9 g
NP86N04DHE-S12-AY
Note1, 2
TO-262 (MP-25 Fin Cut) typ. 1.8 g
NP86N04MHE-S18-AY
Note1
TO-220 (MP-25K) typ. 1.9 g
NP86N04NHE-S18-AY
Note1
Pure Sn (Tin)
Tube
50 p/tube
TO-262 (MP-25SK) typ. 1.8 g
Notes 1.
Pb-free (This product does not contain Pb in the external electrode.)
2.
Not for new design
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
R
DS(on)
= 4.4 m
Ω
MAX. (V
GS
= 10 V, I
D
= 43 A)
Low input capacitance
C
iss
= 5900 pF TYP.
Built-in gate protection diode
<R>
(TO-220)
(TO-262)
(TO-263)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NP88N04MHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04MHE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04NHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04NHE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N055CHE-S12-AZ | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP88N03KDG-E1-AY | 功能描述:MOSFET N-CH 30V 88A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NP88N03KUG-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| NP88N03KUG-E1-AY | 功能描述:MOSFET N-CH 30V 88A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NP88N03KUG-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,30V/88A |
| NP88N04CHE | 制造商:Renesas Electronics Corporation 功能描述: |
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