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參數資料
| 型號： | NSI45025ZT1G |
| 廠商： | ON Semiconductor |
| 文件頁數： | 2/7頁 |
| 文件大小： | 164K |
| 描述： | IC CCR/LED DVR 45V 25MA SOT223-4 |
| 標準包裝： | 1,000 |
| 功能： | * |
| 檢測方法： | * |
| 精確度： | * |
| 輸入電壓： | * |
| 電流 - 輸出： | * |
| 工作溫度： | * |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | TO-261-4，TO-261AA |
| 供應商設備封裝： | SOT-223 |
| 包裝： | 帶卷 (TR) |
NSI45025ZT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25癈 unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Steady State Current @ Vak = 7.5 V (Note 1)
I
reg(SS)
21.25
25
28.75
mA
Voltage Overhead (Note 2)
V
overhead
1.8
V
Pulse Current @ Vak = 7.5 V (Note 3)
I
reg(P)
22
26
30
mA
Capacitance @ Vak = 7.5 V (Note 4)
C
2.6
pF
Capacitance @ Vak = 0 V (Note 4)
C
6.9
pF
1. I
reg(SS)
steady state is the voltage (Vak) applied for a time duration e 10 sec, using FR4 @ 300 mm
2
2 oz. Copper traces, in still air.
2. V
overhead
= V
in
V
LEDs
. V
overhead
is typical value for 75% I
reg(SS)
.
3. I
reg(P)
nonrepetitive pulse test. Pulse width t d 300 msec.
4. f = 1 MHz, 0.02 V RMS.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 5) T
A
= 25癈
Derate above 25癈
P
D
954
7.6
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 5)
R
?SPAN class="pst NSI45025ZT1G_2471105_5">JA
131
癈/W
Thermal Reference, JunctiontoLead 4 (Note 5)
R
?SPAN class="pst NSI45025ZT1G_2471105_5">JL4
40.8
癈/W
Total Device Dissipation (Note 6) T
A
= 25癈
Derate above 25癈
P
D
1074
8.6
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 6)
R
?SPAN class="pst NSI45025ZT1G_2471105_5">JA
116
癈/W
Thermal Reference, JunctiontoLead 4 (Note 6)
R
?SPAN class="pst NSI45025ZT1G_2471105_5">JL4
39.9
癈/W
Total Device Dissipation (Note 7) T
A
= 25癈
Derate above 25癈
P
D
1150
9.2
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 7)
R
?SPAN class="pst NSI45025ZT1G_2471105_5">JA
109
癈/W
Thermal Reference, JunctiontoLead 4 (Note 7)
R
?SPAN class="pst NSI45025ZT1G_2471105_5">JL4
42
癈/W
Total Device Dissipation (Note 8) T
A
= 25癈
Derate above 25癈
P
D
1300
10.4
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 8)
R
?/DIV>
JA
96
癈/W
Thermal Reference, JunctiontoLead 4 (Note 8)
R
?/DIV>
JL4
39.4
癈/W
Total Device Dissipation (Note 9) T
A
= 25癈
Derate above 25癈
P
D
1214
9.7
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 9)
R
?SPAN class="pst NSI45025ZT1G_2471105_5">JA
103
癈/W
Thermal Reference, JunctiontoLead 4 (Note 9)
R
?SPAN class="pst NSI45025ZT1G_2471105_5">JL4
40.2
癈/W
Total Device Dissipation (Note 10) T
A
= 25癈
Derate above 25癈
P
D
1389
11.1
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 10)
R
?SPAN class="pst NSI45025ZT1G_2471105_5">JA
90
癈/W
Thermal Reference, JunctiontoLead 4 (Note 10)
R
?/DIV>
JL4
37.7
癈/W
Junction and Storage Temperature Range
T
J
, T
stg
55 to +150
癈
5. FR4 @ 100 mm
2
, 1 oz. copper traces, still air.
6. FR4 @ 100 mm
2
, 2 oz. copper traces, still air.
7. FR4 @ 300 mm
2
, 1 oz. copper traces, still air.
8. FR4 @ 300 mm
2
, 2 oz. copper traces, still air.
9. FR4 @ 500 mm
2
, 1 oz. copper traces, still air.
10.FR4 @ 500 mm
2
, 2 oz. copper traces, still air.
NOTE: Lead measurements are made by noncontact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher 癈/W values based upon empirical
measurements and method of attachment.
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相關代理商/技術參數 |
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| NSI45030AT1G | 功能描述:LED照明驅動器 SOD 123 30mA 10% CCR RoHS:否 制造商:STMicroelectronics 輸入電壓:11.5 V to 23 V 工作頻率: 最大電源電流:1.7 mA 輸出電流: 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:SO-16N |
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| NSI45030AZT1G | 功能描述:LED照明驅動器 SOT223 30mA 10% CCR RoHS:否 制造商:STMicroelectronics 輸入電壓:11.5 V to 23 V 工作頻率: 最大電源電流:1.7 mA 輸出電流: 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:SO-16N |
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| NSI45030T1G | 功能描述:LED照明驅動器 SOD 123 30mA 15% CCR RoHS:否 制造商:STMicroelectronics 輸入電壓:11.5 V to 23 V 工作頻率: 最大電源電流:1.7 mA 輸出電流: 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:SO-16N |
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