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參數資料
| 型號： | NSI45060DDT4G |
| 廠商： | ON Semiconductor |
| 文件頁數： | 2/6頁 |
| 文件大小： | 138K |
| 描述： | IC LED DRIVER/REG CCR DPAK |
| 產品變化通告： | Product Obsolescence 08/Apr/2011 |
| 標準包裝： | 1 |
| 功能： | * |
| 檢測方法： | * |
| 精確度： | * |
| 輸入電壓： | * |
| 電流 - 輸出： | * |
| 工作溫度： | * |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | TO-252-3，DPak（2 引線+接片），SC-63 |
| 供應商設備封裝： | DPAK-3 |
| 包裝： | 標準包裝 |
| 其它名稱： | NSI45060DDT4GOSDKR |
NSI45060DDT4G
http://onsemi.com
2
MAXIMUM RATINGS (T
A
= 25癈 unless otherwise noted)
Rating
Symbol
Value
Unit
AnodeCathode Voltage
Vak Max
45
V
Reverse Voltage
V
R
500
mV
Operating and Storage Junction Temperature Range
T
J
, T
stg
55 to +150
癈
ESD Rating:
Human Body Model
Machine Model
ESD
Class 2
Class B
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T
A
= 25癈 unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Steady State Current @ Vak = 7.5 V (Note 1)
I
reg(SS)
51
60
69
mA
Voltage Overhead (Note 2)
V
overhead
1.8
V
Pulse Current @ Vak = 7.5 V (Note 3)
I
reg(P)
54.7
66
76.95
mA
Capacitance @ Vak = 7.5 V (Note 4)
C
17
pF
Capacitance @ Vak = 0 V (Note 4)
C
70
pF
1. I
reg(SS)
steady state is the voltage (Vak) applied for a time duration e 80 sec, using FR4 @ 300 mm
2
2 oz. Copper traces, in still air.
2. V
overhead
= V
in
V
LEDs
. V
overhead
is typical value for 65% I
reg(SS)
.
3. I
reg(P)
nonrepetitive pulse test. Pulse width t d 300 msec.
4. f = 1 MHz, 0.02 V RMS.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 5) T
A
= 25癈
Derate above 25癈
P
D
1771
14.16
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 5)
R
?SPAN class="pst NSI45060DDT4G_2467096_5">JA
70.6
癈/W
Thermal Reference, JunctiontoLead 4 (Note 5)
R
?SPAN class="pst NSI45060DDT4G_2467096_5">JL4
6.8
癈/W
Total Device Dissipation (Note 6) T
A
= 25癈
Derate above 25癈
P
D
2083
16.67
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 6)
R
?/DIV>
JA
60
癈/W
Thermal Reference, JunctiontoLead 4 (Note 6)
R
?/DIV>
JL4
6.3
癈/W
Total Device Dissipation (Note 7) T
A
= 25癈
Derate above 25癈
P
D
2080
16.64
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 7)
R
?SPAN class="pst NSI45060DDT4G_2467096_5">JA
60.1
癈/W
Thermal Reference, JunctiontoLead 4 (Note 7)
R
?SPAN class="pst NSI45060DDT4G_2467096_5">JL4
6.5
癈/W
Total Device Dissipation (Note 8) T
A
= 25癈
Derate above 25癈
P
D
2441
19.53
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 8)
R
?SPAN class="pst NSI45060DDT4G_2467096_5">JA
51.2
癈/W
Thermal Reference, JunctiontoLead 4 (Note 8)
R
?/DIV>
JL4
5.9
癈/W
Total Device Dissipation (Note 9) T
A
= 25癈
Derate above 25癈
P
D
2309
18.47
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 9)
R
?SPAN class="pst NSI45060DDT4G_2467096_5">JA
54.1
癈/W
Thermal Reference, JunctiontoLead 4 (Note 9)
R
?/DIV>
JL4
6.2
癈/W
Total Device Dissipation (Note 10) T
A
= 25癈
Derate above 25癈
P
D
2713
21.71
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 10)
R
?SPAN class="pst NSI45060DDT4G_2467096_5">JA
46.1
癈/W
Thermal Reference, JunctiontoLead 4 (Note 10)
R
?SPAN class="pst NSI45060DDT4G_2467096_5">JL4
5.7
癈/W
Junction and Storage Temperature Range
T
J
, T
stg
55 to +150
癈
NOTE: Lead measurements are made by noncontact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher 癈/W values based upon empirical
measurements and method of attachment.
5. FR4 @ 300 mm
2
, 1 oz. copper traces, still air.
6. FR4 @ 300 mm
2
, 2 oz. copper traces, still air.
7. FR4 @ 500 mm
2
, 1 oz. copper traces, still air.
8. FR4 @ 500 mm
2
, 2 oz. copper traces, still air.
9. FR4 @ 700 mm
2
, 1 oz. copper traces, still air.
10.FR4 @ 700 mm
2
, 2 oz. copper traces, still air.
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