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參數資料
| 型號： | NSI45090JDT4G |
| 廠商： | ON Semiconductor |
| 文件頁數： | 3/8頁 |
| 文件大小： | 158K |
| 描述： | 90MA ADJUSTABLE CURRENT REG DPAK |
| 標準包裝： | 1 |
| 系列： | * |
| 功能： | * |
| 檢測方法： | * |
| 精確度： | * |
| 輸入電壓： | * |
| 電流 - 輸出： | * |
| 工作溫度： | * |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | TO-252-3，DPak（2 引線+接片），SC-63 |
| 供應商設備封裝： | DPAK-3 |
| 包裝： | 標準包裝 |
| 其它名稱： | NSI45090JDT4GOSDKR |
NSI45090JDT4G
http://onsemi.com
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 5) T
A
= 25癈
Derate above 25癈
P
D
1771
14.16
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 5)
R
?/DIV>
JA
70.6
癈/W
Thermal Reference, JunctiontoLead 4 (Note 5)
R
?/DIV>
JL4
6.8
癈/W
Total Device Dissipation (Note 6) T
A
= 25癈
Derate above 25癈
P
D
2083
16.67
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 6)
R
?SPAN class="pst NSI45090JDT4G_2644750_5">JA
60
癈/W
Thermal Reference, JunctiontoLead 4 (Note 6)
R
?SPAN class="pst NSI45090JDT4G_2644750_5">JL4
6.3
癈/W
Total Device Dissipation (Note 7) T
A
= 25癈
Derate above 25癈
P
D
2080
16.64
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 7)
R
?SPAN class="pst NSI45090JDT4G_2644750_5">JA
60.1
癈/W
Thermal Reference, JunctiontoLead 4 (Note 7)
R
?/DIV>
JL4
6.5
癈/W
Total Device Dissipation (Note 8) T
A
= 25癈
Derate above 25癈
P
D
2441
19.53
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 8)
R
?SPAN class="pst NSI45090JDT4G_2644750_5">JA
51.2
癈/W
Thermal Reference, JunctiontoLead 4 (Note 8)
R
?SPAN class="pst NSI45090JDT4G_2644750_5">JL4
5.9
癈/W
Total Device Dissipation (Note 9) T
A
= 25癈
Derate above 25癈
P
D
2309
18.47
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 9)
R
?SPAN class="pst NSI45090JDT4G_2644750_5">JA
54.1
癈/W
Thermal Reference, JunctiontoLead 4 (Note 9)
R
?/DIV>
JL4
6.2
癈/W
Total Device Dissipation (Note 10) T
A
= 25癈
Derate above 25癈
P
D
2713
21.71
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 10)
R
?SPAN class="pst NSI45090JDT4G_2644750_5">JA
46.1
癈/W
Thermal Reference, JunctiontoLead 4 (Note 10)
R
?SPAN class="pst NSI45090JDT4G_2644750_5">JL4
5.7
癈/W
Junction and Storage Temperature Range
T
J
, T
stg
55 to +175
癈
NOTE: Lead measurements are made by noncontact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher 癈/W values based upon empirical
measurements and method of attachment.
5. FR4 @ 300 mm
2
, 1 oz. copper traces, still air.
6. FR4 @ 300 mm
2
, 2 oz. copper traces, still air.
7. FR4 @ 500 mm
2
, 1 oz. copper traces, still air.
8. FR4 @ 500 mm
2
, 2 oz. copper traces, still air.
9. FR4 @ 700 mm
2
, 1 oz. copper traces, still air.
10.FR4 @ 700 mm
2
, 2 oz. copper traces, still air.
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