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參數(shù)資料
型號(hào): NSTB1002DXV5T1
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: Dual Common Base(雙通用基極-集電極偏置電阻晶體管)
中文描述: 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: CASE 463B-01, 5 PIN
文件頁數(shù): 1/6頁
文件大小: 63K
代理商: NSTB1002DXV5T1
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 0
1
Publication Order Number:
NSTB1002DXV5/D
NSTB1002DXV5T1G,
NSTB1002DXV5T5G
Preferred Devices
Dual Common
BaseCollector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a baseemitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSTB1002DXV5T1G
series, two complementary devices are housed in the SOT553
package which is ideal for low power surface mount applications
where board space is at a premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch Tape and Reel
These are PbFree Devices
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted, common for Q
1
and Q
2
, minus sign for Q
1
(PNP) omitted)
Rating
Symbol
V
CBO
V
CEO
I
C
Value
Unit
Vdc
Q1
Q2
Collector-Base Voltage
40
50
Collector-Emitter Voltage
40
50
Vdc
Collector Current
200
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
= 25
°
C
Derate above 25
°
C
P
D
357 (Note 1)
2.9 (Note 1)
mW
mW/
°
C
Thermal Resistance
Junction-to-Ambient
R
JA
350 (Note 1)
°
C/W
Characteristic
(Both Junctions Heated)
Symbol
P
D
Max
Unit
mW
mW/
°
C
°
C/W
Total Device Dissipation
T
= 25
°
C
Derate above 25
°
C
500 (Note 1)
4.0 (Note 1)
Thermal Resistance
Junction-to-Ambient
R
JA
250 (Note 1)
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR4 @ Minimum Pad
MARKING DIAGRAM
Preferred
devices are recommended choices for future use
and best overall value.
4
5
Q1
Q2
R1
R1
R2
3
1
2
http://onsemi.com
SOT553
CASE 463B
U9 M
1
5
1
5
U9 = Specific Device Code
M
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
Device
Package
Shipping
ORDERING INFORMATION
NSTB1002DXV5T1G SOT553
(PbFree)
4 mm pitch
4000/Tape & Reel
NSTB1002DXV5T5G SOT553
(PbFree)
2 mm pitch
8000/Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NSTB1002DXV5T1G 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA Complementary 50V Dual NPN & PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
NSTB1002DXV5T5G 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA Complementary 50V Dual NPN & PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
NSTB1003DXV5T1 制造商:Rochester Electronics LLC 功能描述:- Bulk
NSTB1003DXV5T1G 功能描述:TRANSISTOR BRT NPN/PNP SOT-553 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:1 個(gè) NPN,1 個(gè) PNP - 預(yù)偏壓式(雙) 電流 - 集電極 (Ic)(最大):70mA,100mA 電壓 - 集電極發(fā)射極擊穿(最大):50V 電阻器 - 基極 (R1)(歐):47k,2.2k 電阻器 - 發(fā)射極 (R2)(歐):47k 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):70 @ 5mA,5V Ib、Ic條件下的Vce飽和度(最大):300mV @ 500µA,10mA 電流 - 集電極截止(最大):- 頻率 - 轉(zhuǎn)換:100MHz,200MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:6-TSSOP,SC-88,SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000784046
NSTB1004DXV5T1 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:
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