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參數(shù)資料
型號: NTA4001N
廠商: ON SEMICONDUCTOR
英文描述: Small Signal MOSFET(小信號N溝道20V,238mA MOSFET 帶ESD保護(hù))
中文描述: 小信號MOSFET(小信號?溝道20V的,二百三十八毫安MOSFET的帶靜電放電保護(hù))
文件頁數(shù): 1/6頁
文件大小: 49K
代理商: NTA4001N
Semiconductor Components Industries, LLC, 2003
September, 2003 Rev. 0
1
Publication Order Number:
NTA4001N/D
NTA4001N
Small Signal MOSFET
20 V, 238 mA, Single, NChannel, Gate
ESD Protection, SC75
Features
Low Gate Charge for Fast Switching
Small 1.6 X 1.6 mm Footprint
ESD Protected Gate
PbFree Package for “Green Manufacturing” Compliance
Applications
Power Management Load Switch
Level Shift
Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
Maximum Ratings
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage
V
GS
±
10
V
Continuous Drain
Current (Note 1)
Steady State = 25
°
C
I
D
238
mA
Power Dissipation
(Note 1)
Steady State = 25
°
C
P
D
300
mW
Pulsed Drain Current
t
P
10 s
I
DM
714
mA
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
150
°
C
Continuous Source Current (Body Diode)
I
SD
238
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
Thermal Resistance Ratings
Parameter
Symbol
Max
Unit
JunctiontoAmbient – Steady State (Note 1)
R
JA
416
°
C/W
1. Surfacemounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq.
[1 oz] including traces).
2.2 @ 2.5 V
Top View
SC75 / SOT416
CASE 463
Style 5
2
1
http://onsemi.com
SC75 (3Leads)
Drain
Gate
3
1
2
Source
3
R
DS(on)
Typ @ V
GS
1.5 @ 4.5 V
I
D
MAX
(Note 1)
V
(BR)DSS
20 V
238 mA
1
3
2
NChannel
MARKING DIAGRAM
3
TF = Specific Device Code
D
= Date Code
TF D
1
2
Device
Package
Shipping
ORDERING INFORMATION
NTA4001NT1
SC75
3000 / Tape & Reel
NTA4001NT1G
SC75
PbFree
3000 / Tape & Reel
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