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參數(shù)資料
型號: NTB18N06LT4G
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK)
中文描述: 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, CASE 418AA-01, D2PAK-3
文件頁數(shù): 1/12頁
文件大小: 92K
代理商: NTB18N06LT4G
Semiconductor Components Industries, LLC, 2003
October, 2003 Rev. 3
1
Publication Order Number:
NTP18N06L/D
NTP18N06L, NTB18N06L
Power MOSFET
15 Amps, 60 Volts,
Logic Level
NChannel TO220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
Vdc
DraintoGate Voltage (R
GS
= 10 m )
V
DGR
60
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
10 ms)
V
GS
10
20
Vdc
Drain Current
Continuous @ T
C
= 25
°
C
Continuous @ T
C
= 100
°
C
Single Pulse (t
p
10 s)
I
D
I
D
I
DM
15
8.0
45
Adc
Adc
A
pk
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
48.4
0.32
Watts
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, V
DS
= 60 Vdc,
I
L(pk)
= 11 A, L = 1.0 mH, R
G
= 25 )
E
AS
61
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
3.1
72.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
T
L
260
°
C
15 AMPERES
60 VOLTS
R
DS(on)
= 100 m
TO220AB
CASE 221A
STYLE 5
12
3
4
NChannel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
NTx18N06L = Device Code
x
= B or P
LL
= Location Code
Y
= Year
WW
= Work Week
NTx18N06L
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx18N06L
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
D
2
PAK
CASE 418AA
STYLE 2
4
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
相關(guān)PDF資料
PDF描述
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NTB22N06LT4 功能描述:MOSFET N-CH 60V 22A D2PAK-3 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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