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參數(shù)資料
| 型號(hào)： | NTB60N06G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 60 V, 60 A, N−Channel TO−220 and D2PAK |
| 中文描述： | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, CASE 418B-04, D2PAK-3 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 85K |
| 代理商： | NTB60N06G |
Semiconductor Components Industries, LLC, 2004
October, 2004 Rev. 3
1
Publication Order Number:
NTP60N06/D
NTP60N06, NTB60N06
Power MOSFET
60 V, 60 A, NChannel
TO220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
PbFree Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
Vdc
DraintoGate Voltage (R
GS
= 10 M )
V
DGR
60
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
10 ms)
V
GS
V
GS
20
30
Vdc
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
10 s)
I
D
I
D
I
DM
60
42.3
180
Adc
Apk
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
P
D
150
1.0
2.4
W
W/
°
C
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 75 Vdc, V
GS
= 10 Vdc, L = 0.3 mH
I
L(pk)
= 55 A, V
DS
= 60 Vdc)
E
AS
454
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
R
JC
R
JA
1.0
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
60 VOLTS, 60 AMPERES
R
DS(on)
= 14 m
NChannel
D
S
G
TO220
CASE 221A
STYLE 5
12
3
4
NTx60N06
x
A
Y
WW
= Device Code
= P or B
= Assembly Location
= Year
= Work Week
NTx60N06
AYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx60N06
AYWW
1
Gate
3
Source
4
Drain
2
Drain
D
2
PAK
CASE 418B
STYLE 2
2
3
4
MARKING
DIAGRAMS
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
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| NTB60N06L | 功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB60N06LG | 功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB60N06LT4 | 功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB60N06LT4G | 功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB60N06T4 | 功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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