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參數(shù)資料
| 型號(hào)： | NTD23N03R |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 23 Amps, 25 Volts, N−Channel DPAK |
| 中文描述： | 3.8 A, 25 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369AA-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 64K |
| 代理商： | NTD23N03R |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 4
1
Publication Order Number:
NTD23N03R/D
NTD23N03R
Power MOSFET
23 Amps, 25 Volts, NChannel DPAK
Features
PbFree Packages are Available
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
HighEfficiency DCDC Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
25
Vdc
GatetoSource Voltage Continuous
V
GS
±
20
Vdc
Thermal Resistance, JunctiontoCase
Total Power Dissipation @ T
C
= 25
°
C
Drain Current
Continuous @ T
C
= 25
°
C, Chip
Continuous @ T
C
= 25
°
C,
Limited by Package
Single Pulse
R
JC
P
D
I
D
I
D
I
DM
5.6
22.3
23
17.1
40
°
C/W
W
A
A
A
Thermal Resistance, JunctiontoAmbient
(Note 1)
Total Power Dissipation @ T
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
76
1.64
4.5
°
C/W
W
A
Thermal Resistance, JunctiontoAmbient
(Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
110
1.14
3.8
°
C/W
W
A
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
D
S
G
NCHANNEL
25 V
32 m
R
DS(on)
TYP
23 A
I
D
MAX
V
(BR)DSS
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369AA
(Surface Mounted)
STYLE 2
T23N03
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
1 2
3
4
DPAK3
CASE 369D
(Straight Lead)
STYLE 2
123
4
MARKING
DIAGRAMS
A
T
N
1
Gate
3
Source
2
Drain
4
Drain
A
T
N
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTD23N03R-1 | 23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03R-1G | 23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03RG | 23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03RT4 | 23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03RT4G | 23 Amps, 25 Volts, N−Channel DPAK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD23N03R-001 | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD23N03R-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03R-1G | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD23N03RG | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD23N03RT4 | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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