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參數(shù)資料
| 型號(hào)： | NTD25P03 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 74K |
| 代理商： | NTD25P03 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 1
1
Publication Order Number:
NTD25P03L/D
NTD25P03L
Power MOSFET
25 A, 30 V, Logic Level PChannel
DPAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes. The
sourcetodrain diode recovery time is comparable to a discrete fast
recovery diode.
Typical Applications
PWM Motor Controls
Power Supplies
Converters
Bridge Circuits
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous
NonRepetitive (tp
≤
10 ms)
Drain Current
Continuous @ T
A
= 25
°
C
Single Pulse (t
p
≤
10 s)
Total Power Dissipation @ T
A
= 25
°
C
Operating and Storage Temperature
Range
V
DSS
30
V
V
GS
V
GSM
15
20
V
Vpk
I
D
I
DM
25
75
A
Apk
P
D
75
Watts
°
C
T
J
, T
stg
55 to
+150
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
Peak I
L
= 20 Apk, L = 1.0 mH,
R
G
= 25 )
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
E
AS
200
mJ
R
JC
R
JA
R
JA
1.65
67
120
°
C/W
Maximum Lead Temperature for Soldering
Purposes, (1/8
″
from case for 10 s)
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
Device
Package
Shipping
ORDERING INFORMATION
NTD25P03L
DPAK
75 Units/Rail
D
S
G
PChannel
NTD25P03LG
DPAK
(PbFree)
75 Units/Rail
NTD25P03LT4
DPAK
2500/Tape & Reel
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
(Surface Mount)
Style 2
MARKING DIAGRAMS
25P03L
Y
WW
Device Code
= Year
= Work Week
Y
2
0
1 2
3
4
Y
2
0
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
(Straight Lead)
Style 2
123
4
30 V
51 m @ 5.0 V
R
DS(on)
TYP
25 A
I
D
MAX
V
(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTD25P03L1
DPAK
Straight Lead
75 Units/Rail
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTD25P03L | Power MOSFET |
| NTD25P03L1 | Power MOSFET |
| NTD25P03LG | Power MOSFET |
| NTD25P03LT4 | Power MOSFET |
| NTD3055-150 | Power MOSFET 9.0Amps, 60Volts N-Channel DPAK(9.0A, 60V，N通道，DPAK封裝的功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD25P03L | 功能描述:MOSFET -30V -25A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD25P03L_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -25 Amp, -30 Volt |
| NTD25P03L1 | 功能描述:MOSFET -30V -25A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD25P03L1G | 功能描述:MOSFET -30V -25A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD25P03LG | 功能描述:MOSFET -30V -25A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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