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參數資料
| 型號： | NTD3055L104T4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 12 A, 60 V, 0.104 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 74K |
| 代理商： | NTD3055L104T4G |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 4
1
Publication Order Number:
NTD3055L104/D
NTD3055L104
Power MOSFET
12 Amps, 60 Volts, Logic Level
NChannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
PbFree Packages are Available
Lower R
DS(on)
Lower V
DS(on)
Tighter V
SD
Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
DraintoGate Voltage (R
GS
= 10 M )
GatetoSource Voltage, Continuous
NonRepetitive (t
p
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
Operating and Storage Temperature Range
V
DSS
V
DGR
V
GS
V
GS
60
60
15
20
Vdc
Vdc
Vdc
10 ms)
10 s)
I
D
I
D
I
DM
P
D
12
10
45
48
0.32
2.1
1.5
55 to
+175
Adc
Apk
W
W/
°
C
W
W
°
C
T
J
, T
stg
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, L = 1.0 mH
I
L(pk)
= 11 A, V
DS
= 60 Vdc)
Thermal Resistance, JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1
″
pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in
2
).
E
AS
61
mJ
R
JC
R
JA
R
JA
T
L
3.13
71.4
100
260
°
C/W
°
C
NChannel
D
S
G
60 V
104 m
R
DS(on)
TYP
12 A
I
D
MAX
V
(BR)DSS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
1 2
3
4
1
Gate
3
Source
2
Drain
4
Drain
DPAK3
CASE 369D
STYLE 2
123
4
A
5
A
5
55L104
A
Y
W
= Device Code
= Assembly Location
= Year
= Work Week
http://onsemi.com
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相關代理商/技術參數 |
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| NTD3055L104T4G | 制造商:ON Semiconductor 功能描述:MOSFET 60V 12A D-PAK |
| NTD3055L170 | 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD3055L170.1G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET |
| NTD3055L170_12 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET |
| NTD3055L170-001 | 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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