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參數資料
| 型號： | NTD40N03R-1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 45 Amps, 25 Volts |
| 中文描述： | 32 A, 25 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, CASE 369D-01, DPAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | NTD40N03R-1G |
Semiconductor Components Industries, LLC, 2004
April, 2004 Rev. 5
1
Publication Order Number:
NTD40N03R/D
NTD40N03R
Power MOSFET
45 Amps, 25 Volts
NChannel DPAK
Features
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
HighEfficiency DCDC Converters
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
25
Vdc
GatetoSource Voltage Continuous
V
GS
±
20
Vdc
Thermal Resistance JunctiontoCase
Total Power Dissipation @ T
C
= 25
°
C
Drain Current
Continuous @ T
C
= 25
°
C, Chip
Continuous @ T
A
= 25
°
C, Limited by Wires
Single Pulse (tp
≤
10 s)
R
JC
P
D
I
D
I
D
I
D
3.0
50
45
32
100
°
C/W
W
A
A
A
Thermal Resistance JunctiontoAmbient
(Note 1)
Total Power Dissipation @ T
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
71.4
2.1
9.2
°
C/W
W
A
Thermal Resistance JunctiontoAmbient
(Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
100
1.5
7.8
°
C/W
W
A
Operating and Storage Temperature Range
T
J
, T
stg
55 to
175
°
C
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq. in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
http://onsemi.com
45 AMPERES, 25 VOLTS
R
DS(on)
= 12.6 m (Typ)
MARKING DIAGRAM
& PIN ASSIGNMENTS
40N03= Device Code
Y
= Year
WW
= Work Week
CASE 369AA
DPAK
(Surface Mount)
STYLE 2
D
S
G
Y
T
N
4 Drain
3
Source
1
Gate
2
Drain
NCHANNEL
CASE 369D
DPAK
(Straight Lead)
STYLE 2
1 2
3
4
4 Drain
1
Gate
2
Drain
3
Source
Y
T
N
4
1
2
3
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTD40N03RG | 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD40N03RT4 | 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD40N03RT4G | 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD412 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 15A I(C) | TO-3 |
| NTD4302 | 功能描述:MOSFET 30V 68A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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